Fundamental Study of the Temperature Ramp-Up Influence for 3C-SiC Hetero-Epitaxy on Silicon (100)

Philip Hens; Günter Wagner; Astrid Hölzing; Rainer Hock; Peter J. Wellmann

doi:10.4028/www.scientific.net/MSF.645-648.151

Paper Titles

3C-SiC Heteroepitaxial Growth on Inverted Silicon Pyramids (ISP)
p.135

SiC Epitaxial Growth on Si(100) Substrates Using Carbon Tetrabromide
p.139

Growth Rate Effect on 3C-SiC Film Residual Stress on (100) Si Substrates
p.143

Low-Temperature, Low-Pressure and Ultrahigh-Rate Growth of Single-Crystalline 3C-SiC on Si Substrate by ULP-CVD Using Organosilane
p.147

Fundamental Study of the Temperature Ramp-Up Influence for 3C-SiC Hetero-Epitaxy on Silicon (100)
p.151

Thermally Induced Surface Reorganization of 3C-SiC(111) Epilayers Grown on Silicon Substrates
p.155

Tuning Residual Stress in 3C-SiC(100) on Si(100)
p.159

Further Evidence of Nitrogen Induced Stabilization of 3C-SiC Polytype during Growth from a Si-Ge Liquid Phase
p.163

Bow in 6 Inch High-Quality Off-Axis (111) 3C-SiC Films
p.167

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Fundamental Study of the Temperature Ramp-Up Influence for 3C-SiC Hetero-Epitaxy on Silicon (100)

Abstract:

Usually a waiting step at around 1000°C to 1100°C during the carbonization step for 3C-SiC on silicon is implemented for establishing a closed carbon layer to prevent the formation of voids. The latter, however, may lead to non-ideal nucleation conditions for high quality layers with a low density of domain boundaries. Our investigations indicate that a continuous ramp-up as fast as possible with no waiting step would be preferable. The worst layer quality, as measured by peak intensity and FWHM of the (200) reflection of 3C SiC, can be found at a temperature of about 1000°C, which indicates that here the nucleation rate would be the highest. So longer periods within this temperature range should be avoided by applying high ramping speeds during the carbonization step.