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Online since: April 2009
Authors: Wojciech Maziarz, Marcin Leonowicz, Jan Dutkiewicz, Rafał Wróblewski
The hot rolling was performed at 900°C and resulted in a reduction of sample
thickness by 45 % and 90 %.
The hot rolling process was carried out at 900°C in several passes causing a reduction of initial thickness of samples up to 45 % and 90 %.
The mean e/a ratio calculated using the obtained data from the EDS analyses was determined as e/a=7.725 for both investigated alloys.
The hot rolling process was carried out at 900°C in several passes causing a reduction of initial thickness of samples up to 45 % and 90 %.
The mean e/a ratio calculated using the obtained data from the EDS analyses was determined as e/a=7.725 for both investigated alloys.
Online since: January 2009
Authors: Sébastien Petitdidier, Pascal Besson, Guillaume Briend, Thierry Salvetat
Fig 3, 4 to 26°) in line with
a reduction of Si-Hx peaks intensity (Cf. table 2, 10 to 38%).
Table 1: Peaks intensity evolution (%) of Si-H and Si-O-Si bonds vibration frequencies when acoustic activation is applied (data associated with figure 4).
Depending on the H2O2 concentration at a fixed immersion time of 1200s, Si-Hx peaks reduction, as well as, Si-H(Ox) and Si-O-Si peaks growth up can be tune.
Table 1: Peaks intensity evolution (%) of Si-H and Si-O-Si bonds vibration frequencies when acoustic activation is applied (data associated with figure 4).
Depending on the H2O2 concentration at a fixed immersion time of 1200s, Si-Hx peaks reduction, as well as, Si-H(Ox) and Si-O-Si peaks growth up can be tune.
Online since: October 2024
Authors: Basingala Praveen Kumar, N.V. Swamy Naidu
A moderate reduction in the conductive properties of the matrix can be attributed to the presence of SiC, which provides this effect.
The LAR exhibits an initial reduction, followed by a substantial growth with increasing SiC content in the material.
These peaks align with the standard reference data for the (011), (112), and (222) lattice planes of crystalline SiO2 (Ref: 98-006-6118).
The LAR exhibits an initial reduction, followed by a substantial growth with increasing SiC content in the material.
These peaks align with the standard reference data for the (011), (112), and (222) lattice planes of crystalline SiO2 (Ref: 98-006-6118).
Online since: June 2011
Authors: Xiang Bin Liu, Xing Lu Pang, Tao Du
Table 1 Operation limits of byproduct gas holders
BF
LDG
COG
Lower order [m3]
50000
10000
50000
Low order [m3]
60000
20000
60000
Middle [m3]
80000
40000
80000
High order [m3]
100000
60000
100000
Higher order [m3]
110000
70000
110000
Table 2 Cost data for objective function
items
penalty factor
Heavy oil
200000
Electricity
5150
Gas emission
4300
High order of gas holder
10
Deviate the center of gas holder
0.4
Low order of gas holder
4
Boiler burner on or off
100000
Switch 2 burners at the same time
200000
According to the main production process of surplus gas quantity after use, we can give buffer processing to surplus gas quantity between gas holder and self-provided power plant boiler through the above optimization model.
Table 3 Comparison of total cost Items Prediction Method Heavy oil costs 0 0 Gas holder penalty 203120 69599 Gas emission penalty 0 0 Burner penalty 0 100000 Power benefit -102865 -104537 Total cost 100255 65062 Conclusions Distributing and utilizing the steel enterprises byproduct gas by reasonable way has the vital significance to iron &steel enterprises’ energy conservation and emission reduction, and it directly affect the enterprise energy efficiency and product cost.
Reduction of the Specific Energy Use in an Integrated Steel Plant—The Effect of an Optimization Model [J].
Table 3 Comparison of total cost Items Prediction Method Heavy oil costs 0 0 Gas holder penalty 203120 69599 Gas emission penalty 0 0 Burner penalty 0 100000 Power benefit -102865 -104537 Total cost 100255 65062 Conclusions Distributing and utilizing the steel enterprises byproduct gas by reasonable way has the vital significance to iron &steel enterprises’ energy conservation and emission reduction, and it directly affect the enterprise energy efficiency and product cost.
Reduction of the Specific Energy Use in an Integrated Steel Plant—The Effect of an Optimization Model [J].
Online since: October 2006
Authors: Shin Ichi Kinouchi, Masayuki Imaizumi, Keiko Fujihira, Yoichiro Tarui, Tetsuya Takami, Tatsuo Ozeki, Tomokatsu Watanabe, Hiroshi Nakatake, Naruhisa Miura, Yukiyasu Nakao
The power loss reduction in SiC modules
becomes more marked at low RG, or high speed
switching.
Using the data in Fig. 4, we tentatively estimated switching losses in practical operations under the typical condition that the peak value of di/dt, which affects surge voltages directly, is fixed at about 250 A/µs.
Reduction of storage impedance in circuits will give much lower loss in practical applications by the SiC power modules.
Using the data in Fig. 4, we tentatively estimated switching losses in practical operations under the typical condition that the peak value of di/dt, which affects surge voltages directly, is fixed at about 250 A/µs.
Reduction of storage impedance in circuits will give much lower loss in practical applications by the SiC power modules.
Online since: June 2004
Authors: S.P. Wilks, G. Pope, W.Y. Lee, K.S. Teng, I. Blackwood, Philip Andrew Mawby, Owen James Guy
XPS data was recorded after each deposition and annealing step.
This suggests that a 0.3eV reduction in barrier height and subsequent decrease in the width of the depletion region is the basis for the ohmic behaviour of the SIP contact.
This reduction in the depletion region width has been rationalised in terms of the introduction of donor states into the semiconductor surface region, which enables current transport via thermionic field emission across the Schottky barrier [4, 5].
This suggests that a 0.3eV reduction in barrier height and subsequent decrease in the width of the depletion region is the basis for the ohmic behaviour of the SIP contact.
This reduction in the depletion region width has been rationalised in terms of the introduction of donor states into the semiconductor surface region, which enables current transport via thermionic field emission across the Schottky barrier [4, 5].
Online since: August 2013
Authors: Mao Chieh Chi, Ming Cheng Liu, Yen Chun Liu
Meanwhile, reducing the capacity reduction is the focus of recent research [9.10].
Overcharging will cause the electrolyte reduction and battery self-discharge, resulting in reduced capacity [15,16].
The charge and discharge current of 0.1C and cut-off voltages of 4.2 and 3.0, 5.2 and 3.3V were set to conduct continuous charge and discharge experiments and record the data of voltage difference with the time.
Overcharging will cause the electrolyte reduction and battery self-discharge, resulting in reduced capacity [15,16].
The charge and discharge current of 0.1C and cut-off voltages of 4.2 and 3.0, 5.2 and 3.3V were set to conduct continuous charge and discharge experiments and record the data of voltage difference with the time.
Online since: December 2024
Authors: Kosit Jariyatatsakorn, Warat Kongkitkul
Moreover, the degradation phenomenon due to the rising temperature can also be found in crushed tuff, which is commonly used for construction on the coast of China [5], and KMUTT sand, which is local clean sand in Thailand, as reductions in peak shear strength and elastic stiffness can be observed [6].
The study of Jariyatatsakorn and Kongkitkul [10] revealed that the changing initial void ratio before shearing stage induced by thermal expansion of soil solids is only a part of overall temperature effects on the reduction of shear strength.
Consequently, the data presented in Fig. 6 was refitted with Eq. 2 by using common value.
The study of Jariyatatsakorn and Kongkitkul [10] revealed that the changing initial void ratio before shearing stage induced by thermal expansion of soil solids is only a part of overall temperature effects on the reduction of shear strength.
Consequently, the data presented in Fig. 6 was refitted with Eq. 2 by using common value.
Online since: July 2012
Authors: Kun Liu, Shu Min Fei, Mu Lan Wang
With regard to the reduction of the computational cost, a boundary tracing method is employed to extract the contour information instead of numerous scanning operations of the sensitive region.
2.
Performance Index of the Recognition Arithmetic The most important data is the position of the cotton’s centroid for the picker robot.The pick precision is related not only to the absolute error of the centroid recognition but also to the cotton size.
With the concern about the reduction of the computation complexity, the cotton image is smoothed firstly by the opening-closing operation.
Performance Index of the Recognition Arithmetic The most important data is the position of the cotton’s centroid for the picker robot.The pick precision is related not only to the absolute error of the centroid recognition but also to the cotton size.
With the concern about the reduction of the computation complexity, the cotton image is smoothed firstly by the opening-closing operation.
Online since: October 2011
Authors: Zhan Li Gong, Shou Biao Tan, Rui Xing Li, Na Bai
The major SRAM array failures (read failure, access time failure, write failure, hold failure) will be degraded due to:
1) sensitivity of process variation (PV);
2) dramatic reduction of on-to-off current ratio (Ion/Ioff)[1, 6, 8].
It shows a leakage power reduction and allows the overall power consumption to be reduced. 2.4 Write Operation Maintaining a sufficient write margin is challenging in subthreshold or nearthreshold SRAM design due to the small gate overdrive, large load capacitance and process variation.
Fortunately, it is demonstrated that the data correctness is not affected even if the node is charged to a value smaller than the standard values or discharged to a value larger than the standard values. 2.5 Total energy versus supply voltage SRAM arrays (256×16) is realized in IBM 0.13 um, 8-metal CMOS process technology.
It shows a leakage power reduction and allows the overall power consumption to be reduced. 2.4 Write Operation Maintaining a sufficient write margin is challenging in subthreshold or nearthreshold SRAM design due to the small gate overdrive, large load capacitance and process variation.
Fortunately, it is demonstrated that the data correctness is not affected even if the node is charged to a value smaller than the standard values or discharged to a value larger than the standard values. 2.5 Total energy versus supply voltage SRAM arrays (256×16) is realized in IBM 0.13 um, 8-metal CMOS process technology.