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Then its reduction down to ρ = 0.328 g/cm3 takes place.
Thus, during the steel powder treatment the fracture of large agglomerates happens (Fig. 3, a, b, c.); at the MT of the BC powder a significant reduction of particle size takes place (Fig. 3, d, e, f); the CG powder has a particle size less than 4 µm, so no particle refinement was observed; moreover colloidal nature of the filler causes the change in the values of the bulk density due to probable agglomeration of the CG particles.
Quantitative data, as well as SEM-images of coating microstructure are presented in table 1.

EBSD data was collected using a high resolution FEI FEGSEM Quanta 3D equipped with TSL software.
The mean grain size is about 1.9 mm, what indicates that two additional passes of ECAP caused almost 2.5 times reduction of grain size.
Although, reduction of grain size was observed after 3rd passes of ECAP, shape of the grains and lower dislocation density may indicate that the dynamic recrystallization occurred, since the ECAP process was conducted at 200°C.The same behavior was observed by Kim at all in [7].

Introduction Higher breakdown voltage devices based on 4H-SiC enable simplified circuit designs with simultaneous increase in efficiency and reduction in the size and weight of power converters and power systems.
This reduction in VT -mA indicates towards the physical shortening of the channel length and/or manifestation of the short-channel effects (SCEs), which scales up for the lower Lch. [3] The difference in VSD at Vgs, 0 V and -5 V, in figure 2(b) further confirms an increase in the channel leakage as Lch is scaled from 0.8 to 0.5 µm for both Tox of 50 and 65 nm.
Variations in the threshold voltage plotted in figure 5(b) are based on the five-point sweep measurements carried out on wafers representing gate-oxide splits of 50 and 65 nm, while the data plotted in Figure 2 and Figure 6 is from spot-test measurements carried out at wafer level covering all devices, using an IP tester and automatic probe set-up. [13] Fig. 5.

This paper presents constructive solutions that allow the reduction of errors due to the movement between the guidance rulers and the sheet metal.
Diagram of ideas of reduction methods of the deformations of the sheet metal after processing due to the clearance between the guidance rulers Table 1.
Overview of the portable device Experimental Research While conducting experimental data, for this research it was used a PAI6 press (MADE IN ROMANIA), in order to trim some steel specimens on a portion of only 32mm (1/15 from maximum stroke).

Generally, a significant reduction of the free carrier concentration was observed [4-6].
Fig 3 shows capacitance vs. temperature data for a 4H sample irradiated to 2 × 1015 cm-2 after several annealing steps. 0 200 400 600 800 1000 1200 1400 1600 0 1 2 3 4 5 6 7 e-dose: 2 × 10 15 cm -2 e-dose: 4 × 10 15 cm -2 e-dose: 8 × 10 15 cm -2 e-dose: 1.6 × 10 16 cm -2 Neff (10 15cm-3) Annealing temperature (o C) Before irradiation ( ) 4H SiC Fig.1.
Summary A strong reduction of the free carrier concentration has been observed in both 4H and 6H n-type SiC as a result of MeV-electron irradiation.

However, since this reduction can compromise the part appearance and, most important, its mechanical behaviour, care must be taken in this process.
The materials were considered isotropic, their elastic behaviour was described by the corresponding Young modulus, Poison coefficient and Yield stress (listed in Table 1), and their inelastic behaviour was described using the classical plasticity model [14], using data obtained experimental during the tensile tests performed.
The changes made in the container geometry and its thickness profile improved the mechanical performance of the container and led to a reduction in weight of the order of the 13.5%, evidencing the usefulness and efficiency of FEA tools in this type of studies.

It can be seen from these data that the iron, tungsten and molybdenum contents vary in the conventionally processed (AISI M2 and VWM3C) and P/M (AISI T15 and Sinter 23) high speed steels.
In the case of M2 and Sinter 23 this reduction is nearly 50%.
In the case of T15 and VWM3C the reductions were 36% and 25%, respectively.

In this paper, the rice straw fiber was composed with PLA for both performance modification and cost reduction purposes.
These results could be caused by the decline of the melting enthalpy, thickness reduction of the crystal and the increase of surface free energy, based on Hoffman-weeks theory [10-11].
The specific data of the composites from DSC analysis has been tabulated in Table 1.

We have observed an approximate 50% reduction in IDSS at 300°C with Figure 3.
The transient SOA was estimated using data from Table I and by approximating the VJFET as a semi-infinite slab subjected to a sudden onset of heat flux at the surface (i.e., the junction) [8].
The quasi-on VJFET's advantage increases further when the 50% reduction in IDSS caused by the 300°C junction temperature limit is considered (the circular symbol in Fig. 3).

While Figs. 7(b) and 7(c) show that the relevant elements have probably experienced some form of damage, as reflected by the reduction of stress with increasing strain in both directions, Fig. 7(a) shows that the relevant element has retained its stiffness up to the point of failure.
The reduction of stress and strain in the vertical direction for this particular element was presumably caused by the formation of a crack nearby.
Mouterde (visiting student, ENSICAEN, France) for his contribution to the provision of the ESPI data.