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Online since: September 2012
Authors: Sara Casciati, Patrick Terriault, Fabio Casciati, Vicenç Torra, Carlota Auguet, Antonio Isalgue
The HRTEM establishes a complex morphology with grains and sub-grains with a minimum size of about 80 nm [12].
According to the Basquin law, the asymptotic stress for an “infinite” number of working cycles approaches 170 MPa.
The former ones are associated to the interaction between the interface displacements and the dislocations, the grain surfaces and so on.
The first one is realized in the cable number 1 of the ELSA-JRC-EU facility (Fig. 11).
Fig. 11. a: The SMA effects on the cable number 1 of ELSA. b: Simulation of the cable under a sinusoidal excitation: free cable, cable with wax and cable with wax and SMA damper.
According to the Basquin law, the asymptotic stress for an “infinite” number of working cycles approaches 170 MPa.
The former ones are associated to the interaction between the interface displacements and the dislocations, the grain surfaces and so on.
The first one is realized in the cable number 1 of the ELSA-JRC-EU facility (Fig. 11).
Fig. 11. a: The SMA effects on the cable number 1 of ELSA. b: Simulation of the cable under a sinusoidal excitation: free cable, cable with wax and cable with wax and SMA damper.
Online since: January 2019
Authors: Xin Fu He, Shi Wu, Dong Jie Wang, Han Cao, Yan Kun Dou, Wen Yang, Li Xia Jia
The helium atoms are insoluble in the metal, which may cause lattice distortion and high internal stress in the material, meanwhile they are easily be trapped at grain boundaries, dislocations, and other defects and aggregated into bubbles.
When the temperature is high, He will segregate near the grain boundary and reduce the grain boundary strength to cause non-hardening embrittlement of the material [1].
By removing all of the atoms (whose numbers denote as S) within a spherical region with the desired diameter, then inserting certain helium atoms (whose numbers denote as M) in this region with a percentage (M/S), the helium bubble with He/V ratio M/(S-M) was created.
The increase of yield strength due to these irradiation defects, can be expressed as (3) where is the yield strength increasement, M is the Taylor factor, is the increase of CRSS and it can be expressed as (4) where μ is the shear modulus of the matrix BCC Fe (80GPa), is the Burgers vector (0.249nm), N and D are number density and diameter of helium bubble, respectively.
Wang Ji [18] apply α values of 0.4 for He bubbles with diameter of 1.7-3.56 nm and 0.25 for dislocation loops, based on the dispersed barrier-hardening(DBH) model and TEM analysis results of defects size and number density, to predict the hardness increment at 300℃ and 450℃.
When the temperature is high, He will segregate near the grain boundary and reduce the grain boundary strength to cause non-hardening embrittlement of the material [1].
By removing all of the atoms (whose numbers denote as S) within a spherical region with the desired diameter, then inserting certain helium atoms (whose numbers denote as M) in this region with a percentage (M/S), the helium bubble with He/V ratio M/(S-M) was created.
The increase of yield strength due to these irradiation defects, can be expressed as (3) where is the yield strength increasement, M is the Taylor factor, is the increase of CRSS and it can be expressed as (4) where μ is the shear modulus of the matrix BCC Fe (80GPa), is the Burgers vector (0.249nm), N and D are number density and diameter of helium bubble, respectively.
Wang Ji [18] apply α values of 0.4 for He bubbles with diameter of 1.7-3.56 nm and 0.25 for dislocation loops, based on the dispersed barrier-hardening(DBH) model and TEM analysis results of defects size and number density, to predict the hardness increment at 300℃ and 450℃.
Online since: July 2020
Authors: Zbigniew Brytan, Wojciech Pakieła
The essential processing parameters include scanning speed, line spacing, defocusing value, and a number of scanning as well as the surrounding atmosphere and sample surface properties like composition and roughness.
The typical surface topography of the 2B surface finish (Fig. 1a) shows visible rounded grains of smooth boundaries and the slip lines visible on the surface (Fig. 1b) formed during plastic deformation.
The cross-slip events and activation of multiple slip systems are also viewable as slip line crossing without deviation on the grain surface.
The typical pickled grains of rough and developed surface topography is visible (Fig. 2a), while the space between grain boundaries is smooth (Fig. 2b).
The steel grains of pickled morphology, with visible holes and cavities, are uniformly covered by dense and compact oxide layer (Fig. 12a) of typical nanogranular morphology and step edges of oxide nuclei arrangement (Fig. 12b).
The typical surface topography of the 2B surface finish (Fig. 1a) shows visible rounded grains of smooth boundaries and the slip lines visible on the surface (Fig. 1b) formed during plastic deformation.
The cross-slip events and activation of multiple slip systems are also viewable as slip line crossing without deviation on the grain surface.
The typical pickled grains of rough and developed surface topography is visible (Fig. 2a), while the space between grain boundaries is smooth (Fig. 2b).
The steel grains of pickled morphology, with visible holes and cavities, are uniformly covered by dense and compact oxide layer (Fig. 12a) of typical nanogranular morphology and step edges of oxide nuclei arrangement (Fig. 12b).
Online since: April 2007
Authors: Zhao Xian Xiong, Hong Qiu, Z.G. Su
Results and Discussion
SEM image of the ceramic surface is shown in Fig.1, show-
ing a typical microstructure of electronic ceramics with
homogeneously distributing grains in diameter of about 8
um.
Fig. 5 Bad percentage (left) and voltage distribution (right) of capacitors after the thermal shock Table 1 Insulation resistance and bad rate of voltage withstanding after damp heat Insulated resistance after damp heat Serial number Epoxy resin (g) / curing agent (g) Curing temperature / time R (average) > 10GΩ Bad rate of voltage resistance A 100 / 27 365 GΩ OK 0 % B 100 / 29 195 GΩ OK 0 % C 100 / 31 91 GΩ OK 0 % D 100 / 37 120 ºC / 1 h +130 ºC / 1 h. 50 GΩ OK 0 % Table 2 Bad rate of voltage withstanding of endurance with DC 10 kV at 100ºC for 500 h Serial number Epoxy resin (g) / curing agent (g) Curing temperature and time Bad rate of voltage withstanding A 100 / 26.8 0% B 100 / 29.4 0% C 100 / 31 0% D 100 / 37 120 ºC /1 h+130 ºC /3 h. 0%
Fig. 5 Bad percentage (left) and voltage distribution (right) of capacitors after the thermal shock Table 1 Insulation resistance and bad rate of voltage withstanding after damp heat Insulated resistance after damp heat Serial number Epoxy resin (g) / curing agent (g) Curing temperature / time R (average) > 10GΩ Bad rate of voltage resistance A 100 / 27 365 GΩ OK 0 % B 100 / 29 195 GΩ OK 0 % C 100 / 31 91 GΩ OK 0 % D 100 / 37 120 ºC / 1 h +130 ºC / 1 h. 50 GΩ OK 0 % Table 2 Bad rate of voltage withstanding of endurance with DC 10 kV at 100ºC for 500 h Serial number Epoxy resin (g) / curing agent (g) Curing temperature and time Bad rate of voltage withstanding A 100 / 26.8 0% B 100 / 29.4 0% C 100 / 31 0% D 100 / 37 120 ºC /1 h+130 ºC /3 h. 0%
Online since: December 2012
Authors: Jia Jun Han, Jin Ning Cheng, Feng Wen Pan, Xin Kui Liu, Fang Zhang
But Ag prepared by solvated metal atom impregnation and functional ion pre-adsorption method can avoid some process such as drying, calcinations and high temperature reduction and so on Consequently, Ag has the properties of smaller average grain diameter, larger specific surface area and higher electrocatalytic activity in Ag/C catalysts prepared by solvated metal atom impregnation and functional ion pre-adsorption method [5, 6].
Table 1 The fabrication of Ag/C catalysts Number Mass ratio (PVP/ AgNO3) Concentration of AgNO3(mol/L) Concentration of NaBH4(mol/L) Ag/C catalysts(Ag%) 1 2︰1 0.01 0.01 20 2 2︰1 0.02 0.01 20 3 5︰1 0.01 0.01 20 4 10︰1 0.01 0.01 10 5 10︰1 0.02 0.01 20 3.2 SEM test Fig1-fig5 show the images of Ag/C catalysts obtained by XL30 ESEMFEG(SEM).
Table2 The results of XRD test of Ag/C catalysts Number Mass ratio (PVP/AgNO3) Concentration of AgNO3(mol/L) Concentration of NaBH4(mol/L) Ag/C catalysts(%) Particle size of Ag(nm) 1 2:1 0.01 0.01 20 38.2 2 2:1 0.02 0.01 20 76.6 3 5:1 0.01 0.01 20 33.4 4 10:1 0.01 0.01 10 23.6 5 10:1 0.01 0.01 20 25.1 3.4 polarizations curves Fig6 shows that the polorization curves of oxygen reduction on the electrode with Ag/C catalysts.As shown in Fig6, the electrocatalytic activity of Ag/C catalysts prepared by the polymeric complex protection for Ag(I) enhanced with increasing concentration of AgNO3, the electrocatalytic activity decreased with increasing concentration of AgNO3 at a certain mass ratio of PVP/AgNO3 and the electrocatalytic activity strengthened with increasing concentration of Ag at a certain mass ratio of PVP/AgNO3 and concentration of AgNO3.
Table 1 The fabrication of Ag/C catalysts Number Mass ratio (PVP/ AgNO3) Concentration of AgNO3(mol/L) Concentration of NaBH4(mol/L) Ag/C catalysts(Ag%) 1 2︰1 0.01 0.01 20 2 2︰1 0.02 0.01 20 3 5︰1 0.01 0.01 20 4 10︰1 0.01 0.01 10 5 10︰1 0.02 0.01 20 3.2 SEM test Fig1-fig5 show the images of Ag/C catalysts obtained by XL30 ESEMFEG(SEM).
Table2 The results of XRD test of Ag/C catalysts Number Mass ratio (PVP/AgNO3) Concentration of AgNO3(mol/L) Concentration of NaBH4(mol/L) Ag/C catalysts(%) Particle size of Ag(nm) 1 2:1 0.01 0.01 20 38.2 2 2:1 0.02 0.01 20 76.6 3 5:1 0.01 0.01 20 33.4 4 10:1 0.01 0.01 10 23.6 5 10:1 0.01 0.01 20 25.1 3.4 polarizations curves Fig6 shows that the polorization curves of oxygen reduction on the electrode with Ag/C catalysts.As shown in Fig6, the electrocatalytic activity of Ag/C catalysts prepared by the polymeric complex protection for Ag(I) enhanced with increasing concentration of AgNO3, the electrocatalytic activity decreased with increasing concentration of AgNO3 at a certain mass ratio of PVP/AgNO3 and the electrocatalytic activity strengthened with increasing concentration of Ag at a certain mass ratio of PVP/AgNO3 and concentration of AgNO3.
Online since: February 2011
Authors: Nur Afidah Abu Bakar, Suhaimi Muhammed
During milling process, rice husk will separate from rice grain as a waste.
Rice husk with variety number of Malaysian Research (MR211) was obtained from Bernas Kuala Selangor while UF resin was supplied by Malayan Adhesive and Chemical Sdn Bhd at Shah Alam, Selangor.
The number of panels was 3 pieces per each trial.
Rice husk with variety number of Malaysian Research (MR211) was obtained from Bernas Kuala Selangor while UF resin was supplied by Malayan Adhesive and Chemical Sdn Bhd at Shah Alam, Selangor.
The number of panels was 3 pieces per each trial.
Online since: December 2010
Authors: Fang Liu, Wen Jie Fan, Chuan Xun Zhou
Introduction
Polycrystalline diamond compacts (for short PDC) are a kind of product composed of micron grain diamond and hard alloy object with the condition of high temperature and high pressure.
Table 1 PDC sample number Sample number Samper characteristic Remnant strsee ranking A Compound-anneal-abrasive process-anneal 3 B Compound-anneal-abrasive process 2 C Compound-abrasive process 1 (max) D Diamond micropowder 0 (min) (a) (b) Fig.2 XRD pattern of PDC Results and Discussion It is clear in the Fig.2 (a) and Fig.2 (b) that the back-bottom of spectral line increases when there is the residual stresses (σ) of PDC.
Table 1 PDC sample number Sample number Samper characteristic Remnant strsee ranking A Compound-anneal-abrasive process-anneal 3 B Compound-anneal-abrasive process 2 C Compound-abrasive process 1 (max) D Diamond micropowder 0 (min) (a) (b) Fig.2 XRD pattern of PDC Results and Discussion It is clear in the Fig.2 (a) and Fig.2 (b) that the back-bottom of spectral line increases when there is the residual stresses (σ) of PDC.
Online since: October 2011
Authors: Xin Bing Huang, Xiao Juan Liu, Shu Qin Qiu
The head and central section of the molded parts is sand grain surface, and its surface roughness is Ra3.2um.
Conclusions We explore the processing technology of the cavity part and programming techniques on the basis for a number of analog processing after we reference peers processing experience and refer to a large number of related technical data.
Conclusions We explore the processing technology of the cavity part and programming techniques on the basis for a number of analog processing after we reference peers processing experience and refer to a large number of related technical data.
Online since: February 2014
Authors: Zdenek Caha, Jan Plachy, Vít Petranek
BWS with coarse grain gritting and plastomeric covering substance was applied on the sealing layer.
Specimens identified with number 7 were reserves, the central part of the sample was left for further tests.
Registration number: CZ.1.07/2.3.00/20.0111, funded by European Social Funds, Operational program Education for Competitiveness and state budget of the Czech Republic and the research project TA CR No.
Specimens identified with number 7 were reserves, the central part of the sample was left for further tests.
Registration number: CZ.1.07/2.3.00/20.0111, funded by European Social Funds, Operational program Education for Competitiveness and state budget of the Czech Republic and the research project TA CR No.
Online since: April 2014
Authors: Zheng Tao Jiang, Yi Peng Zhang, Xiao Li Huang, Chen Li, Pian Niu
Proxy re-encryption is an efficient solution to ciphertext delegation and distribution, which also enables the sender to carry out fine-grained control on his ciphertext.
(c) Multi-use of and single-use of PRE According to the number of receivers of PRE schemes, it can be classified into two groups: multi-use, i.e., the ciphertext can be transformed from Alice to more than one receiver; and single-use, i.e., the ciphertext can only be transformed one receiver.
Different type of PRE schemes (such as full trusted/semi trusted proxy, bidirectional/Unidirectional, multi-use/single-use, Transitive/non-transitive PRE) can be used to particular fine-grained control on ciphertexts.
(c) Multi-use of and single-use of PRE According to the number of receivers of PRE schemes, it can be classified into two groups: multi-use, i.e., the ciphertext can be transformed from Alice to more than one receiver; and single-use, i.e., the ciphertext can only be transformed one receiver.
Different type of PRE schemes (such as full trusted/semi trusted proxy, bidirectional/Unidirectional, multi-use/single-use, Transitive/non-transitive PRE) can be used to particular fine-grained control on ciphertexts.