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Online since: August 2015
Authors: Mat Nasir Kari, Zilaila Zakaria, Mohd Ainor Yahya, Muhammad Murtadha Othman, Mohd Fazli Osman, Mohammad Lutfi Othman, Mohd Hisham Salleh, Wan Shazli Wan Ismail, Shaharani Jafar, Baihaki Azrae, Siti Habsah Mohd Dzin, Mohd Zaini Abu Hassan, Ismail Musirin, Muhd Azri Abdul Razak
The location to install shunt capacitor is obtained based on tolerance of loss reduction.
The proposed method is difficult to be implemented for the three phase system due to complex data be analysed.
Jewell, "Optimal capacitor placement and sizes for power loss reduction using combined power loss index-loss sensitivity factor and genetic algorithm," in Power and Energy Society General Meeting, 2012 IEEE, 2012, pp. 1-8
The proposed method is difficult to be implemented for the three phase system due to complex data be analysed.
Jewell, "Optimal capacitor placement and sizes for power loss reduction using combined power loss index-loss sensitivity factor and genetic algorithm," in Power and Energy Society General Meeting, 2012 IEEE, 2012, pp. 1-8
Online since: November 2015
Authors: Hai Hao, Xiao Teng Liu, Xiao Xu Zhu, Yu Zhen Zhao
.% master alloy is added, the mean dimension is about 109μm, which is about 61% reduction compared with the AZ31 alloy without inoculation.
It is well established that the mechanical properties improve with the grain size reduction according to the Hall-Petch (H-P) relationship [11,12].
Fig. 3 Tensile property data of AZ31 + x% Al-Ti-C master alloy 3.4 Grain refining mechanism It is commonly accepted that adding foreign nucleate substrate into the melt will decrease the nucleation energy and increase the nucleation probability, which finally lead to grain refinement [13].
It is well established that the mechanical properties improve with the grain size reduction according to the Hall-Petch (H-P) relationship [11,12].
Fig. 3 Tensile property data of AZ31 + x% Al-Ti-C master alloy 3.4 Grain refining mechanism It is commonly accepted that adding foreign nucleate substrate into the melt will decrease the nucleation energy and increase the nucleation probability, which finally lead to grain refinement [13].
Online since: September 2008
Authors: Ryo Hattori, Masanobu Yoshikawa, Takeshi Mitani
Recently, a significant reduction in
deep level defects and improvement of carrier lifetime have been observed in 4H-SiC epilayer with
shallow ion implantation layer and subsequent annealing above 1600 ºC by Strasta et al. [4].
The reduction in deep level defects underneath the implanted layer has been attributed to the diffusion of carbon interstitials (Ci) from the shallow implanted layer.
Of course, a virgin sample, as-implanted sample, and annealed epilayer without implantation (data is not shown) did not exhibit the L1 luminescence.
The reduction in deep level defects underneath the implanted layer has been attributed to the diffusion of carbon interstitials (Ci) from the shallow implanted layer.
Of course, a virgin sample, as-implanted sample, and annealed epilayer without implantation (data is not shown) did not exhibit the L1 luminescence.
Online since: October 2006
Authors: Marek Skowronski, A.Y. Polyakov, Qiang Li, Mark A. Fanton, R.G Ray, B.E. Weiland, R.L. Cavalero
Use of solid source material also resulted in a
reduction in N contamination in the boules by a factor of two compared to powdered source
material.
In addition, DLTS data clearly show a reduction in the concentration of traps related to Si-rich growth conditions.
In addition, DLTS data clearly show a reduction in the concentration of traps related to Si-rich growth conditions.
Online since: June 2004
Authors: Yasunori Tanaka, Kazutoshi Kojima, Takaya Suzuki, Tsutomu Yatsuo, Kazuo Arai, Kenji Fukuda, T. Hayashi
We have succeeded in epitaxial
growth on the (000-1) C-face without surface defects or morphologies [4], however, there is no data
on the details of blocking characteristics in pn junctions, which is very important information for the
design of MOSFETs or other devices.
Baliga [5] pointed out that the surface electric field exceeded the maximum bulk electric field, which means the reduction of the breakdown voltage, below the negative bevel angle of 80° in the silicon pn diode.
In our previous work [6], we did not observe such a reduction of the breakdown voltage originating in the excessive surface electric field in the pn diode with the same negative bevel angle on the 6H-SiC(0001) Si-face.
Baliga [5] pointed out that the surface electric field exceeded the maximum bulk electric field, which means the reduction of the breakdown voltage, below the negative bevel angle of 80° in the silicon pn diode.
In our previous work [6], we did not observe such a reduction of the breakdown voltage originating in the excessive surface electric field in the pn diode with the same negative bevel angle on the 6H-SiC(0001) Si-face.
Molecular Dynamic Simulations of Contact Thermal Resistance between Two Individual Silicon Nanowires
Online since: June 2011
Authors: Yun Fei Chen, Jian Giang Wang, Ke Dong Bi
Although the MD results [9] are one order of magnitude larger than the experimental data, they still indicated that the contact thermal resistance played an important role in heat transport in CNT-polymer composites.
More heat exchange through this interaction, leading to a reduction in the interfacial thermal resistance of the system as shown in the inset of Fig. 3.
A theoretical calculation from Yan et al[16] also suggested that there exists a substantial reduction in the thermal conductivity of the multi-walled carbon nanotubes under the assumption of strong intertube coupling because of the intertube resistance.
More heat exchange through this interaction, leading to a reduction in the interfacial thermal resistance of the system as shown in the inset of Fig. 3.
A theoretical calculation from Yan et al[16] also suggested that there exists a substantial reduction in the thermal conductivity of the multi-walled carbon nanotubes under the assumption of strong intertube coupling because of the intertube resistance.
Online since: May 2011
Authors: Ya Kun Zhang, Fei Gao, Xin Dong Wang, Jian Ling Li
SCE correspond to the oxidation of manganese(II) and the reduction of manganese dioxide[11].
SCE) rises from the redox transition between p-benzoquinone and the hydroquinone forms of PANI [13], in which leucoemeraldine is the complete reduction state of PANI; emeraldine, middle oxidation state; and pernigraniline, complete oxidation state.
From the data in Table 1, it is obvious that the capacitance of PANI/MnO2 increases to 1.69 times as that of the PANI at the current density of 0.1 mA cm-2.
SCE) rises from the redox transition between p-benzoquinone and the hydroquinone forms of PANI [13], in which leucoemeraldine is the complete reduction state of PANI; emeraldine, middle oxidation state; and pernigraniline, complete oxidation state.
From the data in Table 1, it is obvious that the capacitance of PANI/MnO2 increases to 1.69 times as that of the PANI at the current density of 0.1 mA cm-2.
Online since: January 2010
Authors: Xiang Zhong Ren, Qian Ling Zhang, Xi Li, Jian Hong Liu, Pei Xin Zhang
The final products were then filtered, washed with deionized water, and dried at 70°C in a vacuum
oven for 24h.
2.2 Measurements
The crystal structure of the LiFePO4/PPy composites was evaluated by X-ray diffraction(XRD)
methods using Cu Kα radiation (BRUKER D8 ADVANCE, Germany).The X-ray diffraction data
were corrected in the angle interval from 10° to 60° (2θ) at step of 1.2°/min.
The oxidation and reduction peaks of LiFePO4/PPy appear at 3.552 and 3.308V respectively.
The potential interval between oxidation and reduction peaks is 0.244V, representing a good reversibility of LiFePO4/PPy composite with 2.5 wt.% PPy.
The oxidation and reduction peaks of LiFePO4/PPy appear at 3.552 and 3.308V respectively.
The potential interval between oxidation and reduction peaks is 0.244V, representing a good reversibility of LiFePO4/PPy composite with 2.5 wt.% PPy.
Online since: August 2007
Authors: Mitsutoshi Kamakura, Keiro Tokaji, Yoshihiko Uematsu
One of the reasons is lack of
the most recent fatigue data.
Mechanical properties. 0.2% proof Tensile Elongation Reduction Elastic Vickers Material stress strength of area modulus hardness σ 0.2 σ B φ ψ E HV [MPa] [MPa] [%] [%] [GPa] Mg2Si-F 187 256 3.5 4.8 50 70 Mg2Si-C 186 245 2.6 4.2 50 66 Extruded AZ31 274 15 31 40 53Fatigue Strength.
In Mg2Si-C, cracks can initiate easier at larger particles under lower applied stresses and crack initiation at much larger particles leads to the reduction of crack growth life.
Mechanical properties. 0.2% proof Tensile Elongation Reduction Elastic Vickers Material stress strength of area modulus hardness σ 0.2 σ B φ ψ E HV [MPa] [MPa] [%] [%] [GPa] Mg2Si-F 187 256 3.5 4.8 50 70 Mg2Si-C 186 245 2.6 4.2 50 66 Extruded AZ31 274 15 31 40 53Fatigue Strength.
In Mg2Si-C, cracks can initiate easier at larger particles under lower applied stresses and crack initiation at much larger particles leads to the reduction of crack growth life.
Online since: November 2005
Authors: C.S. Kim, Jai Won Byeon, J.H. Song, S.I. Kwun
The ultrasonic measurement system used in this experiment consisted of a
pulser/receiver, two piezoelectric broad band probe with a center frequency of 5 MHz for pulsating
and receiving surface wave, digital storage oscilloscope with a data sampling rate of 5GHz (time
resolution of 0.2ns), and a personal computer for signal processing.
For the assessment of strength reduction due to the thermal degradation, micro-Vickers hardness was measured at various points avoiding second phase particles as a function of distance from the surface. 3 4 5 6 7 2800 2900 3000 3100 3200 3300 Surface Wave Velocity [m/s] Frequency [MHz] 2000 hour (polished surface layer) as-received 2000 hour 3000 hour 4300 hour 0 1000 2000 3000 4000 2850 2900 2950 3000 3050 3100 3150 3200 Surface Wave Velocity [m/s] Thermal Degradation Time [hr] 4.0 MHz 4.5 MHz 5.0 MHz 5.5 MHz Fig. 1 Frequency dependence of the ultrasonic surface wave velocity in the thermally degraded Co-based superalloy Fig. 2 Variation of surface wave velocity with thermal degradation time at various frequencies Results The change of ultrasonic surface wave velocity with frequency at each specimen is represented in Fig. 1.
This reduction in mechanical strength near the surface can be attributed to the depletion of solution hardening element (i.e., Cr) during thermal degradation.
For the assessment of strength reduction due to the thermal degradation, micro-Vickers hardness was measured at various points avoiding second phase particles as a function of distance from the surface. 3 4 5 6 7 2800 2900 3000 3100 3200 3300 Surface Wave Velocity [m/s] Frequency [MHz] 2000 hour (polished surface layer) as-received 2000 hour 3000 hour 4300 hour 0 1000 2000 3000 4000 2850 2900 2950 3000 3050 3100 3150 3200 Surface Wave Velocity [m/s] Thermal Degradation Time [hr] 4.0 MHz 4.5 MHz 5.0 MHz 5.5 MHz Fig. 1 Frequency dependence of the ultrasonic surface wave velocity in the thermally degraded Co-based superalloy Fig. 2 Variation of surface wave velocity with thermal degradation time at various frequencies Results The change of ultrasonic surface wave velocity with frequency at each specimen is represented in Fig. 1.
This reduction in mechanical strength near the surface can be attributed to the depletion of solution hardening element (i.e., Cr) during thermal degradation.