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Online since: October 2010
Authors: Ai Hong Bi, Jin Hua Zhu
W and Mo co-doped VO2(M) nanopowders were synthesized by thermal decomposition via two-step method using oxalic acid as reduction acid, vanadium pentoxide as vanadium source, ammonium tungstate and ammonium molybdates as doped sources.
Therefore, VO2 has great application potentials, such as temperature sensing devices[4], optical switching devices[5-6], modulator and polarizer of sub-millimeter wave radiation[7], optical data storage medium[8], variable reflectance mirrors[9] and energy efficiency windows[10] and so on.
Therefore, VO2 has great application potentials, such as temperature sensing devices[4], optical switching devices[5-6], modulator and polarizer of sub-millimeter wave radiation[7], optical data storage medium[8], variable reflectance mirrors[9] and energy efficiency windows[10] and so on.
Online since: August 2011
Authors: Qi Ming Gao, Guo Qing Zhao, Li Li Wu
It results in further deterioration of the material’s quality
Wavelet Denoise
The actual measured signal contains noise, it tends to obscure the useful information, so it is necessary to denoise the signal .Because the wavelet analysis is easy to operate and has good noise reduction effect, it is widely used.
The primitive figure of rolling force was drawn according to the measured rolling force data, as shown in Fig.3.
The primitive figure of rolling force was drawn according to the measured rolling force data, as shown in Fig.3.
Online since: December 2010
Authors: Yan Hong Chang, Bin Wang, Hui Luo, Lin Jie Zhi
As a kind of graphene production methods, reduction of graphite oxide (GO) has been studied for a long time.
The specification curve (Fig. 2) was draw first to calculate the MB concentration change from absorbency data accurately, which confirms the feasibility of the following sorption process.
The specification curve (Fig. 2) was draw first to calculate the MB concentration change from absorbency data accurately, which confirms the feasibility of the following sorption process.
Online since: January 2012
Authors: Ke Jing Li, Fang Long Zhu
Shrinkage
Drying shrinkage may be defined as the volume reduction that concrete suffers as a consequence of the moisture migration when exposed to a high heat flux environment than the initial one in its own pore system.
The parameter values determined by fitting Equation (3) to the experimental data.
The parameter values determined by fitting Equation (3) to the experimental data.
Online since: July 2014
Authors: Xiao Peng Nie, Xin Gang Li, Hong Wei Fan, Li Bin Xu, Ke Qin Ding
In practice actual engineering, it can be used as a tool for acceleration sensor signal acquisition, using Natural Excitation Technique method to extract the structural modal parameters, but this method is not perfect, in the actual project,,we have to do noise reduction processing and other measures , in order to achieve the desired result goal.
Lim Structural damage detection using measured FRF data.
Lim Structural damage detection using measured FRF data.
Online since: October 2007
Authors: Liviu Nistor, M. Tintelecan
Fig. 1 The drawing principle in "cassette roller die" There are known and well mastered the processes of bar drawing with simple shape or of
rolling, but few data are known about the process building and the influence of the different factors
in wire drawing between rollers, forming a "cassette roller die".[1]
Advantages as:
▫ the possibility to work metallic materials with a low deformability,
▫ the possibility of growing the speed of process,
▫ rollers are immune to heating wires as the effect of part transformation in heat through
friction
▫ high production through the shortening of the necessary times to change used tools,
▫ the wires with high dimensional uniformity,
▫ is an immune process to oxides presence on the wire surface,
▫ low residuals tensile on the wire surface,
recommend it as a technological accessible solution.
For a higher partial reduction, the elastic deformation of the rollers and of the support assembly is higher (fig. 4) and reveals dimensional modifications for wire (wire material: steel with 0.15% C; 0.60% Mn; 0.35% Si).
For a higher partial reduction, the elastic deformation of the rollers and of the support assembly is higher (fig. 4) and reveals dimensional modifications for wire (wire material: steel with 0.15% C; 0.60% Mn; 0.35% Si).
Online since: January 2005
Authors: Wen Xiu Cheng, Ping Sun Qiu, Ai Li Ding
The absorption data for these films was analyzed based on the relation [3].
)2(12/1)( gEhCh −= ν
να (1)
Fig.6 shows 2/1
)( ναh versus νh plotted for ZST film.
band gap of the 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -0.8 -0.4 0.0 0.4 0.8 1.2 1.6 tanΨΨΨΨ and cos∆∆∆∆ Photon Energy (eV) Fig.3 Spectra of the ellipometric parameter for ZST films annealed at 450 o C (dotted lines) and 700o C (solid lines) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 1.8 2.0 2.2 2.4 2.6 2.8 (b) (a) Refractive Index Photon Energy (eV) Fig.4 Refractive index n of ZST films annealed at (a) 700o C and (b) 450 o C respectively 3.0 3.5 4.0 4.5 0 200 400 600 800 1000 (b) (a) (ααααhνννν) 0.5 (eV-cm -1 ) 0.5 Photon Energy (eV) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0.0 0.1 0.2 0.3 0.4 (b) (a) Extinction Coefficient Photon Energy (eV) Fig.5 Extinction coefficient k of ZST thin films annealed at (a) 450o C and (b) 700o C Fig.6 The 2/1 )( ναh versus νh curves of ZST thin films annealed at (a) 450 o C and (b) 700 o C amorphous silicon nanoclusters shifts to high energy with reduction
band gap of the 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -0.8 -0.4 0.0 0.4 0.8 1.2 1.6 tanΨΨΨΨ and cos∆∆∆∆ Photon Energy (eV) Fig.3 Spectra of the ellipometric parameter for ZST films annealed at 450 o C (dotted lines) and 700o C (solid lines) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 1.8 2.0 2.2 2.4 2.6 2.8 (b) (a) Refractive Index Photon Energy (eV) Fig.4 Refractive index n of ZST films annealed at (a) 700o C and (b) 450 o C respectively 3.0 3.5 4.0 4.5 0 200 400 600 800 1000 (b) (a) (ααααhνννν) 0.5 (eV-cm -1 ) 0.5 Photon Energy (eV) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0.0 0.1 0.2 0.3 0.4 (b) (a) Extinction Coefficient Photon Energy (eV) Fig.5 Extinction coefficient k of ZST thin films annealed at (a) 450o C and (b) 700o C Fig.6 The 2/1 )( ναh versus νh curves of ZST thin films annealed at (a) 450 o C and (b) 700 o C amorphous silicon nanoclusters shifts to high energy with reduction
Online since: July 2008
Authors: Emad A. Badawi, M.A. Abdel-Rahman, M.S. Abdallah, N.M. Hassan
For example, the spectrum curves for the
mean lifetime of positron changes as a function of the sample deformation or
annealed temperature; [2-5] advantages of these methods in obtaining both qualitative
and quantitative data on behaviour are pointed out.
In the second region (II) between 575-650 K, a huge decrease in the value of occurs, which attributed to the annealing of dislocations introduced during the deformation. 3.2 Isothermal annealing measurements Samples of 2024 alloy were deformed to 25 % thickness reduction, and consecutively subject to isothermal annealing.
In the second region (II) between 575-650 K, a huge decrease in the value of occurs, which attributed to the annealing of dislocations introduced during the deformation. 3.2 Isothermal annealing measurements Samples of 2024 alloy were deformed to 25 % thickness reduction, and consecutively subject to isothermal annealing.
Online since: May 2022
Authors: Andrea Severino, Brunella Cafra, Ruggero Anzalone
For semiconductor application wafer thinning plays an important role on device performances guaranteeing for example strong reduction on ON-Resistance (Ron) on power devices.
Optical profilometer images of the as received SiC C- face surface a) and grinded surface b) Despite the same grinding process has been performed on all SiC wafers under investigation, different Cbow values have been measured as it is possible to see from data collected in fig. 2 where Cbow values normalized (N Cbow) to the lowest one, obtained for wafer 1, have been collected.
Optical profilometer images of the as received SiC C- face surface a) and grinded surface b) Despite the same grinding process has been performed on all SiC wafers under investigation, different Cbow values have been measured as it is possible to see from data collected in fig. 2 where Cbow values normalized (N Cbow) to the lowest one, obtained for wafer 1, have been collected.