Impact of Dislocation on Warpage of Thinned 4H-SiC Wafers

Brunella Cafra; Ruggero Anzalone; Andrea Severino

doi:10.4028/p-599hof

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HomeMaterials Science ForumMaterials Science Forum Vol. 1062Impact of Dislocation on Warpage of Thinned 4H-SiC...

Impact of Dislocation on Warpage of Thinned 4H-SiC Wafers

Abstract:

In this work the relationship between changes in wafer center bow after thinning process and the wafer morphology has been shown. KOH wet etching allowed the observation and counting of dislocation in 4H-SiC substrate. In deep a correspondence between changes in wafer center bow and the dislocation density of the SiC substrate has been observed. By using a counting software, a relationship with the basal plane dislocation and center bow has also been observed.

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Periodical:

Materials Science Forum (Volume 1062)

Pages:

165-169

DOI:

https://doi.org/10.4028/p-599hof

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Online since:

May 2022

Authors:

Brunella Cafra*, Ruggero Anzalone, Andrea Severino

Keywords:

4H-SiC, Dislocation, Thinning, Warpage

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Creative Commons CC BY 4.0

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* - Corresponding Author

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