Study of Laser Backside Ohmic Contact Formation of SiC-Ni Interface to Evaluate the Process Influence on the Electrical Characteristics

Dirk Lewke; Frank Supplieth; Maik von Ringleben; John Ransom

doi:10.4028/p-e031p2

Paper Titles

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Impact of Dislocation on Warpage of Thinned 4H-SiC Wafers
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Study of Laser Backside Ohmic Contact Formation of SiC-Ni Interface to Evaluate the Process Influence on the Electrical Characteristics
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HomeMaterials Science ForumMaterials Science Forum Vol. 1062Study of Laser Backside Ohmic Contact Formation of...

Study of Laser Backside Ohmic Contact Formation of SiC-Ni Interface to Evaluate the Process Influence on the Electrical Characteristics

Abstract:

Within this paper, we will present the results of a study on the ohmic contact formation process with nanosecond (ns) pulsed UV lasers. For the study we compared two laser processes: The base line process with a 100-300 ns pulsed laser with Gaussian beam profile and the 3D-Micromac AG process with a 50-100 ns pulsed laser with top hat beam profile. The forward voltage characteristics at wafer level was analyzed and proves a clear benefit of the top hat laser process. Besides, the forward voltage characteristics of a second run was performed to analyze the influence of increasing energy density to the electrical characteristic of heat sensitive front side structures. Also with high energy density no negative influence could be detected.

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Periodical:

Materials Science Forum (Volume 1062)

Pages:

180-184

DOI:

https://doi.org/10.4028/p-e031p2

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Cite this paper

Online since:

May 2022

Authors:

Dirk Lewke*, Frank Supplieth, Maik von Ringleben, John Ransom

Keywords:

4H-SiC, Annealing, Laser, Metallization, Ohmic Contact Formation, Silicon Carbide

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Creative Commons CC BY 4.0

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* - Corresponding Author

References

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