Engineering the Schottky Interface of 3.3 kV SiC JBS Diodes Using a P2O5 Surface Passivation Treatment

A. Benjamin Renz; Oliver James Vavasour; Amador Pérez-Tomás; Qinze Cao; Vishal Ajit Shah; Yeganeh Bonyadi; Vasantha Pathirana; Tanya Trajkovic; G.W.C. Baker; Philip  Andrew Mawby; Peter Michael Gammon

doi:10.4028/p-97jy4p

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HomeMaterials Science ForumMaterials Science Forum Vol. 1062Engineering the Schottky Interface of 3.3 kV SiC...

Engineering the Schottky Interface of 3.3 kV SiC JBS Diodes Using a P₂O₅ Surface Passivation Treatment

Abstract:

A systematic study is presented into the impact of a P₂O₅ surface passivation treatment, carried out prior to the deposition of a high refactory metal contact to 3.3 kV JBS diodes. Electrical results from Mo, W and Nb diodes reveal that those diodes that undergo the treatment have a major leakage current reduction, most significantly by 3.5 orders of magnitude to 1.5×10^-6 A.cm^-2 for treated W diodes. When applied to fully optimized 3.3 kV Mo/SiC JBS diodes, the P₂O₅ surface passivation treatment reduces the apparent barrier height, as well as the leakage current. SIMS analysis reveals that during the treatment, phosphorous diffuses into the top 10 nm of the SiC, achieving a peak density of 10¹⁹ cm^-3, while XPS results suggest some of this diffuses into the contact metal during the contact anneal, altering the SBH. TCAD simulations help give more insight into band diagram changes at the Schottky interface, where the partial activation of the phosphorous ions is shown to alter the Schottky barrier, promoting a thermionic field emission conduction, effectively lowering the barrier height at the interface in Mo/4H-SiC diodes.

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Periodical:

Materials Science Forum (Volume 1062)

Pages:

190-194

DOI:

https://doi.org/10.4028/p-97jy4p

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Online since:

May 2022

Authors:

A. Benjamin Renz*, Oliver James Vavasour, Amador Pérez-Tomás, Qinze Cao, Vishal Ajit Shah, Yeganeh Bonyadi, Vasantha Pathirana, Tanya Trajkovic, G.W.C. Baker, Philip Andrew Mawby, Peter Michael Gammon

Keywords:

3.3 kV JBS Diodes, 4H-SiC, P₂O₅ Surface Passivation, Schottky Barrier Diode

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References

[1] F. Roccaforte, G. Brezeanu, P. Gammon, F. Giannazzo, S. Rascunà, and M. Saggio, Schottky Contacts to Silicon Carbide: Physics, Technology and Applications,, Advancing Silicon Carbide Electronics Technology, I: Metal Contacts to Silicon Carbide: Physics, Technology, Applications, (2018).

DOI: 10.21741/9781945291852-3

Google Scholar

[2] R. Rupp, R. Elpelt, R. Gerlach, R. Schömer, and M. Draghici, A new SiC diode with significantly reduced threshold voltage," in Power Semiconductor Devices and IC,s (ISPSD), 2017 29th International Symposium on, 2017: IEEE, pp.355-358.

DOI: 10.23919/ispsd.2017.7988991

Google Scholar

[3] L. Stöber, J. Konrath, F. Patocka, M. Schneider, and U. Schmid, Controlling 4H–SiC Schottky Barriers by Molybdenum and Molybdenum Nitride as Contact Materials,, IEEE Transactions on Electron Devices, vol. 63, no. 2, pp.578-583, (2015).

DOI: 10.1109/ted.2015.2504604

Google Scholar

[4] A. Renz et al., The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment,, Journal of Applied Physics, vol. 127, no. 2, p.025704, (2020).

Google Scholar

[5] A. B. Renz, Vavasour, O.J., Shah, V.A., Pathirana, V., Trajkovic, T., Bonyadi, Y., Wu, R., Ortiz-Gonzalez, J.A., Rong, X., Baker, G.W.C., Mawby, P., and Gammon, P.M., 3.3 kV SiC JBS diodes employing a P2O5 surface passivation treatment to improve electrical characteristics,, IEEE Energy Conversion Congresse and Exposition (ECCE), (2021).

DOI: 10.1109/ecce47101.2021.9594999

Google Scholar

[6] R. J. Tung, Electron transport at metal-semiconductor interfaces: General theory,, Phys. Rev. B, vol. 45, no. 23, p.13509, (1992).

DOI: 10.1103/physrevb.45.13509

Google Scholar