A Novel Tool Layout and Process for Single Side Wet Electrochemical Processing of Porous Silicon Carbide Layers without Edge Exclusion

Xavier Gay; Norbert Bay; Franck Delahaye; Stefan Hansen; Holger H. Kuehnlein

doi:10.4028/p-nx5r53

Paper Titles

Via Size-Dependent Properties of TiAl Ohmic Contacts on 4H-SiC
p.185

Engineering the Schottky Interface of 3.3 kV SiC JBS Diodes Using a P₂O₅ Surface Passivation Treatment
p.190

The Development of Monolithic Silicon Carbide Intracortical Neural Interfaces for Long-Term Human Implantation
p.195

Graphite Assisted P and Al Implanted 4H-SiC Laser Annealing
p.204

A Novel Tool Layout and Process for Single Side Wet Electrochemical Processing of Porous Silicon Carbide Layers without Edge Exclusion
p.209

Multiscale Simulations of Plasma Etching in Silicon Carbide Structures
p.214

Optimisation of Ti Ohmic Contacts Formed by Laser Annealing on 4H-SiC
p.219

Ohmic Contact Formation on 4H-SiC with a Low Thermal Budget by Means of Shallow Phosphorous Ion Implantation
p.224

Highest Quality and Repeatability for Single Wafer 150mm SiC CMP Designed for High Volume Manufacturing
p.229

HomeMaterials Science ForumMaterials Science Forum Vol. 1062A Novel Tool Layout and Process for Single Side...

A Novel Tool Layout and Process for Single Side Wet Electrochemical Processing of Porous Silicon Carbide Layers without Edge Exclusion

Abstract:

In this paper we present a novel tool layout for wet chemical processing of porous silicon carbide layers. The novel tool concept includes single side processing without edge exclusion. There is no need to contact the backside of the wafer. We show SEM cross sections of the porous layer made by different currents densities. With increased current density the porosity increases. After optimization of the process conditions, we achieve a layer thickness non-uniformity of 10%.

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