Graphite Assisted P and Al Implanted 4H-SiC Laser Annealing

Cristiano Calabretta; Alessandro Pecora; Marta Agati; Stefania Privitera; Annamaria Muoio; Simona Boninelli; Francesco La Via

doi:10.4028/p-98r1yh

Paper Titles

Study of Laser Backside Ohmic Contact Formation of SiC-Ni Interface to Evaluate the Process Influence on the Electrical Characteristics
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Via Size-Dependent Properties of TiAl Ohmic Contacts on 4H-SiC
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Engineering the Schottky Interface of 3.3 kV SiC JBS Diodes Using a P₂O₅ Surface Passivation Treatment
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The Development of Monolithic Silicon Carbide Intracortical Neural Interfaces for Long-Term Human Implantation
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Graphite Assisted P and Al Implanted 4H-SiC Laser Annealing
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A Novel Tool Layout and Process for Single Side Wet Electrochemical Processing of Porous Silicon Carbide Layers without Edge Exclusion
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Multiscale Simulations of Plasma Etching in Silicon Carbide Structures
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Optimisation of Ti Ohmic Contacts Formed by Laser Annealing on 4H-SiC
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Ohmic Contact Formation on 4H-SiC with a Low Thermal Budget by Means of Shallow Phosphorous Ion Implantation
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HomeMaterials Science ForumMaterials Science Forum Vol. 1062Graphite Assisted P and Al Implanted 4H-SiC Laser...

Graphite Assisted P and Al Implanted 4H-SiC Laser Annealing

Abstract:

This paper discusses a novel annealing technique for 4H-SiC implants which involves the use of pulsed XeCl laser (l=308 nm). In particular, an absorbing graphitic coating is used to protect the sample from surface atoms desorption or phase separation. Both conventional furnace annealing and laser annealing on P and Al implants, commonly employed for source and body in metal-oxide-semiconductor field-effect transistors (MOSFETs), were examined through Transmission Electron Microscopy (TEM), u-Raman spectroscopy and Scanning Electron Microscopy (SEM). It is shown that the implant activated through traditional thermal annealing at 1650 °C for 30 min has a large network of dislocation loops, while they do not appear to be present in the laser annealed implant. Through Raman spectroscopy and SEM investigations both the crystalline quality of the laser annealed sample and the integrity of the surface were attested.

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Periodical:

Materials Science Forum (Volume 1062)

Pages:

204-208

DOI:

https://doi.org/10.4028/p-98r1yh

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Online since:

May 2022

Authors:

Cristiano Calabretta*, Alessandro Pecora, Marta Agati, Stefania Privitera, Annamaria Muoio, Simona Boninelli, Francesco La Via

Keywords:

4H-SiC, Aluminum, Defects, Dopant Activation, Laser Annealing, Phosphorus, Raman, SEM, TEM, XeCl

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* - Corresponding Author

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