Ohmic Contact Formation on 4H-SiC with a Low Thermal Budget by Means of Shallow Phosphorous Ion Implantation

Vinoth Sundaramoorthy; Stephan Wirths; Lars Knoll

doi:10.4028/p-c277as

Paper Titles

Graphite Assisted P and Al Implanted 4H-SiC Laser Annealing
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A Novel Tool Layout and Process for Single Side Wet Electrochemical Processing of Porous Silicon Carbide Layers without Edge Exclusion
p.209

Multiscale Simulations of Plasma Etching in Silicon Carbide Structures
p.214

Optimisation of Ti Ohmic Contacts Formed by Laser Annealing on 4H-SiC
p.219

Ohmic Contact Formation on 4H-SiC with a Low Thermal Budget by Means of Shallow Phosphorous Ion Implantation
p.224

Highest Quality and Repeatability for Single Wafer 150mm SiC CMP Designed for High Volume Manufacturing
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Mechanism Governing Surface Roughening of Al Ion Implanted 4H-SiC during Annealing under a C-Cap
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Estimation of Activation and Compensation Ratios in Al⁺ Ion Implanted 4H-SiC: Comparison of Two Methodologies
p.241

Decoration and Density Increase of Dislocations in PVT-Grown SiC Boules with Post-Growth Thermal Processing
p.246

HomeMaterials Science ForumMaterials Science Forum Vol. 1062Ohmic Contact Formation on 4H-SiC with a Low...

Ohmic Contact Formation on 4H-SiC with a Low Thermal Budget by Means of Shallow Phosphorous Ion Implantation

Abstract:

In this manuscript Ohmic contact formation at low annealing temperatures is demonstrated using shallow implantation technique. Remarkably, Ni Ohmic contacts with a specific contact resistivity of 1.9x10^-5 Ωcm² have been achieved at as-deposited condition. Smooth interfaces along with reduced Schottky barrier at the metal/SiC interface contributed to improved Ohmic performance at as-deposited and 450°C anneal conditions.

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