Optimisation of Ti Ohmic Contacts Formed by Laser Annealing on 4H-SiC

Clément Berger; Daniel Alquier; Jean François Michaud

doi:10.4028/p-6z36aj

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HomeMaterials Science ForumMaterials Science Forum Vol. 1062Optimisation of Ti Ohmic Contacts Formed by Laser...

Optimisation of Ti Ohmic Contacts Formed by Laser Annealing on 4H-SiC

Abstract:

This work is focused on the fabrication of Titanium-based ohmic contacts by Laser Thermal Annealing (LTA) on n-type silicon carbide (4H-SiC). Their morphologies and electrical properties were studied by using two sets of parameters impacting the laser pulse overlap. With both sets, the ohmic contact transition was reached. The high overlap conditions produced a massive degradation of the contact morphology by leaving uncovered SiC. An optimisation of the annealing parameters was successfully performed by reducing the overlap. With the low overlap configuration, a specific contact resistance of 1.2×10^-4 Ω.cm² was measured for a fluence of 4.25 J.cm^-2 with a satisfying contact surface morphology.

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Periodical:

Materials Science Forum (Volume 1062)

Pages:

219-223

DOI:

https://doi.org/10.4028/p-6z36aj

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Online since:

May 2022

Authors:

Clément Berger*, Daniel Alquier, Jean François Michaud

Keywords:

4H-SiC, Interfaces, Laser Annealing, Ohmic Contact, Titanium

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Creative Commons CC BY 4.0

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* - Corresponding Author

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