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HomeMaterials Science ForumMaterials Science Forum Vol. 1062Silicon Carbide - Graphene Nano-Gratings on 4H and...

Silicon Carbide - Graphene Nano-Gratings on 4H and 6H Semi-Insulating SiC

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Abstract:

A technical methodology of fabrication of hierarchically scaled multitude graphene nanogratings with varying pitches ranging from the micrometer down to sub 40 nm scale combined with sub 10 nm step heights on 4H and 6H semi-insulating SiC for length scale measurements is proposed. The nanogratings were fabricated using electron-beam lithography combined with dry etching of graphene, incorporating a standard semiconductor processing technology. A scientific evaluation of critical dimension, etching step heights, and surface characterization of graphene nanograting on both polytypes were compared and evaluated.

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Silicon Carbide and Related Materials 2021

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Periodical:

Materials Science Forum (Volume 1062)

Pages:

170-174

DOI:

https://doi.org/10.4028/p-wn4zya

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Online since:

May 2022

Authors:

Sobin Mathew, Sergey P. Lebedev, Alexander A. Lebedev, Bernd Hähnlein, J. Stauffenberg, E. Manske, Joerg Pezoldt*

Keywords:

Epitaxial Graphene, Nanogratings, Silicon Carbide

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