Opening through 200 mm Silicon Carbide Epitaxy

Danilo Crippa; Mani Azadmand; Marco Mauceri; Silvio Preti; Marco Puglisi; Carmelo Vecchio

doi:10.4028/p-369665

Paper Titles

SiC Mass Commercialization: Present Status and Barriers to Overcome
p.125

150 mm SiC Engineered Substrates for High-Voltage Power Devices
p.131

Impact of Surface Emissivity on Crystal Growth and Epitaxial Deposition
p.136

Vanadium Incorporation in 3C-SiC Epilayers and its Consequences for Electrical Properties of 3C-SiC Material
p.140

Opening through 200 mm Silicon Carbide Epitaxy
p.146

Novel Vitrified-Bond Ultra-Fine Grinding Technology for SiC Polishing
p.155

Charge Trapping Mechanisms in Nitridated SiO₂/ 4H-SiC MOSFET Interfaces: Threshold Voltage Instability and Interface Chemistry
p.160

Impact of Dislocation on Warpage of Thinned 4H-SiC Wafers
p.165

Silicon Carbide - Graphene Nano-Gratings on 4H and 6H Semi-Insulating SiC
p.170

HomeMaterials Science ForumMaterials Science Forum Vol. 1062Opening through 200 mm Silicon Carbide Epitaxy

Opening through 200 mm Silicon Carbide Epitaxy

Abstract:

In this paper, the performance of a new CVD reactor (called PE1O8) designed by LPE and developed in the European project REACTION to process uniform 4H-SiC homoepitaxy on 200 mm substrate is reported. Its tunable multi-zone injection system and new gas delivery configuration ensure the uniform gas distribution throughout the substrate. Excellent thickness and doping uniformity on 200 mm substrates are achieved with run-to-run variation less than 1.4% and 5.6% respectively.

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Periodical:

Materials Science Forum (Volume 1062)

Pages:

146-151

DOI:

https://doi.org/10.4028/p-369665

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Online since:

May 2022

Authors:

Danilo Crippa*, Mani Azadmand, Marco Mauceri, Silvio Preti, Marco Puglisi, Carmelo Vecchio

Keywords:

200 mm, 4H-SiC, Defects, Doping Uniformity, Epitaxy, Run-to-Run, Thickness Uniformity

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Creative Commons CC BY 4.0

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* - Corresponding Author

References

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