Impact of Surface Emissivity on Crystal Growth and Epitaxial Deposition

Wei Fan; Jeff Lennartz; Peter Schmidt-Sane; Brian Kozak; Bruno Balland; Alex Galyukov; Daria Zimina; Daniel Feezell

doi:10.4028/p-ppa587

Paper Titles

Applicability of a Flat-Bed Birefringence Setup for the Determination of Threading Dislocations of Silicon Carbide Wafers
p.113

Chemical Vapor Deposition of 3C-SiC on [100] Oriented Silicon at Low Temperature < 1200°C for Photonic Applications
p.119

SiC Mass Commercialization: Present Status and Barriers to Overcome
p.125

150 mm SiC Engineered Substrates for High-Voltage Power Devices
p.131

Impact of Surface Emissivity on Crystal Growth and Epitaxial Deposition
p.136

Vanadium Incorporation in 3C-SiC Epilayers and its Consequences for Electrical Properties of 3C-SiC Material
p.140

Opening through 200 mm Silicon Carbide Epitaxy
p.146

Novel Vitrified-Bond Ultra-Fine Grinding Technology for SiC Polishing
p.155

Charge Trapping Mechanisms in Nitridated SiO₂/ 4H-SiC MOSFET Interfaces: Threshold Voltage Instability and Interface Chemistry
p.160

HomeMaterials Science ForumMaterials Science Forum Vol. 1062Impact of Surface Emissivity on Crystal Growth and...

Impact of Surface Emissivity on Crystal Growth and Epitaxial Deposition

Abstract:

Tantalum carbide (TaC) coating, produced in an ultrahigh temperature chemical vapor deposition (CVD) process, exhibited high thermal and chemical stabilities, low emissivity, and high purity. Low emissivity of 0.3~0.43 was measured on TaC coating at 1000°C and compared with the one of SiC coating. As revealed in both simulation and experiment, the low emissivity of TaC coatings not only improves temperature uniformity in the SiC PVT process, but also reduces power consumption in both SiC crystal growth and GaN epitaxial deposition. The results provide important guidance to process tuning when switching from a conventional graphite or SiC-coated component to its TaC-coated counterpart.

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