150 mm SiC Engineered Substrates for High-Voltage Power Devices
p.131
p.131
Impact of Surface Emissivity on Crystal Growth and Epitaxial Deposition
p.136
p.136
Vanadium Incorporation in 3C-SiC Epilayers and its Consequences for Electrical Properties of 3C-SiC Material
p.140
p.140
Opening through 200 mm Silicon Carbide Epitaxy
p.146
p.146
Novel Vitrified-Bond Ultra-Fine Grinding Technology for SiC Polishing
p.155
p.155
Charge Trapping Mechanisms in Nitridated SiO2/ 4H-SiC MOSFET Interfaces: Threshold Voltage Instability and Interface Chemistry
p.160
p.160
Impact of Dislocation on Warpage of Thinned 4H-SiC Wafers
p.165
p.165
Silicon Carbide - Graphene Nano-Gratings on 4H and 6H Semi-Insulating SiC
p.170
p.170
Polish Scratch Simulation vs. Polish Tool Type
p.175
p.175
Novel Vitrified-Bond Ultra-Fine Grinding Technology for SiC Polishing
Abstract:
The present paper shows a new fixed abrasive bond-grit formulation aimed for best-in-class, low-cost and high-quality finished SiC wafer surfaces. Grinding wheels manufactured with this technology can accomplish ultra-smooth SiC (Ra = 0.55 nm and TTV < 1 μm) surfaces due to their unique bonding structure and their tailored grit size. Additionally, SiC wafers ground with these wheels exhibit reduced sub-surface crystal damage, mirror-like polished surface and improved wafer geometry while both the grinding forces and the wheel wear are kept low.
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Periodical:
Materials Science Forum (Volume 1062)
Pages:
155-159
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Online since:
May 2022
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