Chemical Vapor Deposition of 3C-SiC on [100] Oriented Silicon at Low Temperature &lt; 1200°C for Photonic Applications

Manuel Kollmuss; Johannes Köhler; Hai Yan Ou; Wei Chen Fan; Didier Chaussende; Rainer Hock; Peter J. Wellmann

doi:10.4028/p-nshb40

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HomeMaterials Science ForumMaterials Science Forum Vol. 1062Chemical Vapor Deposition of 3C-SiC on [100]...

Chemical Vapor Deposition of 3C-SiC on [100] Oriented Silicon at Low Temperature < 1200°C for Photonic Applications

Abstract:

3C-SiC films have been grown on [100] n-doped Si substrates in a horizontal cold wall CVD reactor. Without the use of plasma enhancement, the precursors silane and propane are used to deposit silicon carbide films at T < 1200°C. The structure of the grown films has been investigated via FESEM, XRD and Raman spectroscopy. It has been found that the growth rates are between 200 and 300 nm/h. Additionally, structural analysis give evidence of polycrystalline phases. Reasons for that could be insufficient cracking of the precursors and homogenous nucleation of Si species in the gas phase.

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Periodical:

Materials Science Forum (Volume 1062)

Pages:

119-124

DOI:

https://doi.org/10.4028/p-nshb40

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Online since:

May 2022

Authors:

Manuel Kollmuss, Johannes Köhler*, Hai Yan Ou, Wei Chen Fan, Didier Chaussende, Rainer Hock, Peter J. Wellmann

Keywords:

3C-SiC, Cold Wall Reactor, CVD, Heteroepitaxy, Low Temperature, Void

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* - Corresponding Author

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