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Paper Titles
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Analysis of the Morphology of the Growth Interface as a Function of the Gas Phase Composition during the PVT Growth of Silicon Carbide
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Designing SiC Based CMUT Structures: An Original Approach and Related Material Issues
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Interfacial Dislocation Reduction by Optimizing Process Condition in SiC Epitaxy
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Review of Sublimation Growth of SiC Bulk Crystals
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Interfacial Dislocation Reduction by Optimizing Process Condition in SiC Epitaxy

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Abstract:

It is known that generation of interfacial dislocation on SiC epitaxy depends mainly on misfit strain between substrate and the epilayer. In this paper, we investigate the impact of temperature profile, doping profile of the epilayer and resistivity of the substrates on the formation of interfacial dislocation in epilayers. Our preliminary results show that thermal profile during the epitaxy plays a key role in formation of interfacial dislocations in epilayers. We demonstrated reduction or elimination of interfacial dislocation in epilayers by optimizing the temperature profile of the wafers during the epitaxial growth.

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Periodical:

Materials Science Forum (Volume 1062)

Pages:

99-103

DOI:

https://doi.org/10.4028/p-11oe88

Citation:

Cite this paper

Online since:

May 2022

Authors:

Tawhid Rana*, Gil Chung, Andrey Soukhojak, Meong Keun Ju, Matthew Gave, Edward Sanchez

Keywords:

Basal Plane Dislocation (BPD), Interfacial Dislocation (ID), Silicon Carbide Epitaxy

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Creative Commons CC BY 4.0

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