Large Area Growth of Cubic Silicon Carbide Using Close Space PVT by Application of Homoepitaxial Seeding
p.74
p.74
In Situ Monitoring of Unintentionally Released Nitrogen Gas in the Initial PVT Silicon Carbide Growth Process Using Mass Spectrometry
p.79
p.79
Precise Control of Al Incorporation during CVD Growth of SiC Epilayers by Using Hydrogen Chloride
p.84
p.84
Analysis of the Morphology of the Growth Interface as a Function of the Gas Phase Composition during the PVT Growth of Silicon Carbide
p.89
p.89
Designing SiC Based CMUT Structures: An Original Approach and Related Material Issues
p.94
p.94
Interfacial Dislocation Reduction by Optimizing Process Condition in SiC Epitaxy
p.99
p.99
Review of Sublimation Growth of SiC Bulk Crystals
p.104
p.104
Applicability of a Flat-Bed Birefringence Setup for the Determination of Threading Dislocations of Silicon Carbide Wafers
p.113
p.113
Chemical Vapor Deposition of 3C-SiC on [100] Oriented Silicon at Low Temperature < 1200°C for Photonic Applications
p.119
p.119
Designing SiC Based CMUT Structures: An Original Approach and Related Material Issues
Abstract:
We present an epitaxy-based approach for designing a 3C-SiC Capacitive Micromachined Ultrasonic Transducer (CMUT). The design requires to consider a 3C-SiC/Si/3C-SiC heterostructure on a Si substrate. This implies to address different growth steps of SiC on Si and Si on SiC. We present some specific growth related issued, namely the control of selectively grown Si on a masked SiC(100) and the further regrowth of 3C-SiC on a Si (110) layer. The final release of the SiC membrane, to define a CMUT, is also addressed using a simple thermal treatment allowing to suppress several technological steps.
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Periodical:
Materials Science Forum (Volume 1062)
Pages:
94-98
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Online since:
May 2022
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