Microstructure and Optical Properties of (Zr0.8, Sn0.2)TiO4 Thin Films Grown on Si(100) Substrates by a Sol-Gel Process

Abstract:

Article Preview

Amorphous and crystalline (Zr0.8,Sn0.2)TiO4 (ZST) thin films deposited on Si(100) substrates have been prepared by a sol-gel process. The crystal structure and surface morphologies of the thin films have been studied by X-ray diffraction and atomic force microscopy. The crystalline ZST films on Si(100) substrata with a (111) orientation The refractive index n and extinction coefficient k of the amorphous and crystalline thin films were obtained by spectroscopy ellipsometry as a function of phone energy in the range from 0.7 to 5.4 eV. The absorption edges for amorphous and crystalline ZST are 3.83 and 3.51eV of indirect–transition type respectively.

Info:

Periodical:

Materials Science Forum (Volumes 475-479)

Main Theme:

Edited by:

Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie

Pages:

3693-3696

DOI:

10.4028/www.scientific.net/MSF.475-479.3693

Citation:

W. X. Cheng et al., "Microstructure and Optical Properties of (Zr0.8, Sn0.2)TiO4 Thin Films Grown on Si(100) Substrates by a Sol-Gel Process", Materials Science Forum, Vols. 475-479, pp. 3693-3696, 2005

Online since:

January 2005

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.