Microstructure and Optical Properties of (Zr0.8, Sn0.2)TiO4 Thin Films Grown on Si(100) Substrates by a Sol-Gel Process
Amorphous and crystalline (Zr0.8,Sn0.2)TiO4 （ZST） thin films deposited on Si(100) substrates have been prepared by a sol-gel process. The crystal structure and surface morphologies of the thin films have been studied by X-ray diffraction and atomic force microscopy. The crystalline ZST films on Si(100) substrata with a (111) orientation The refractive index n and extinction coefficient k of the amorphous and crystalline thin films were obtained by spectroscopy ellipsometry as a function of phone energy in the range from 0.7 to 5.4 eV. The absorption edges for amorphous and crystalline ZST are 3.83 and 3.51eV of indirect–transition type respectively.
Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie
W. X. Cheng et al., "Microstructure and Optical Properties of (Zr0.8, Sn0.2)TiO4 Thin Films Grown on Si(100) Substrates by a Sol-Gel Process", Materials Science Forum, Vols. 475-479, pp. 3693-3696, 2005