Photoinduced Changes in Sn-Doped Sol-Gel Silica Glass Films

Aiwu Li; Hua Xing; Cuiling Zhou; Jian Shen; Letian Zhang; Wei Zheng; Yushu Zhang

doi:10.4028/www.scientific.net/MSF.475-479.3705

Paper Titles

Laser Induced Preparation of Flexible Cold Cathode and Its Electron Emission Properties
p.3689

Microstructure and Optical Properties of (Zr_0.8, Sn_0.2)TiO4 Thin Films Grown on Si(100) Substrates by a Sol-Gel Process
p.3693

Optical and Electrical Properties of Transparent Conductive ITO Thin Films under Proton Radiation with 100 keV
p.3697

Photoluminescence of SnO₂ Films Prepared by APCVD
p.3701

Photoinduced Changes in Sn-Doped Sol-Gel Silica Glass Films
p.3705

Optical Properties of Silica Films Prepared on Sapphire
p.3709

The Morphology and Optical Characterizations of AlGaN/GaN Based on Al₂O₃ Prepared by MOCVD
p.3713

The Temperature Dependence of In Desorption during InN Growth and Annealing
p.3717

Analysis of Optical Properties and Structure for CdS Films
p.3721

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Photoinduced Changes in Sn-Doped Sol-Gel Silica Glass Films

Abstract:

Sn-doped SiO2 thin films were fabricated on Si substrates by the Sol-Gel method. Permanent refractive index change was found using ultraviolet (UV) laser radiation at 248 nm. The photoinduced refractive index change increased after radiation and variety in the contents of Tin. The optical and surface properties of the films were characterized using X-ray photoelectron spectroscopy (XPS) and variable angle spectroscopic ellipsometry (VASE).