The Temperature Dependence of In Desorption during InN Growth and Annealing
The MOCVD-growth and annealing of InN films have been studied in this work. The XRD spectra of InN films grown at 350 °C~500 °C indicate that the diffraction of In increases with increasing the growth temperature to 425 °C and the temperature higher than 425 °C causes the decrease of In diffraction. The corresponding SEM images show that In grains disappear from the surface as the growth temperature is higher than 425 °C. These are attributed to the increase of the desorption of In with the growth temperature. In addition, the SEM images of the annealed InN films also show that the In grains decrease gradually as the annealing temperature is higher than 425 °C. Thus, it is concluded that the desorption of In is the main process as the temperature is higher than 425 °C.
Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie
Z.X. Bi et al., "The Temperature Dependence of In Desorption during InN Growth and Annealing", Materials Science Forum, Vols. 475-479, pp. 3717-3720, 2005