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Static and Cyclic Deformation of Commercially Pure Al Processed by Equal-Channel Angular Pressing Using Two Routes Mahmoud S Soliman1,a, Ehab A El-Danaf1,b, Abdulhakim A Almajid1,2,c 1 Mechanical Engineering Department- College of Engineering, King Saud University- P.O.
The present data is compared to those for coarse grained Al (CG Al) and ECAPed for 8 passes using route BC (8BC) [8].
El-Danaf, M.S.
El-Rayes: Mater.
Azushima et. al.: CIRP Annals- Manufacturing Technology Vol. 57 (2008), p. 716

Recently, Brüning et al
Crack growth calculation procedure A Paris-type crack growth law formulated in terms of effective ranges of the cyclic J-integral, composed of an elastic and a plastic part according to the proposal of Kumar's et al. [3] da/dn = C ⋅ (∆Jeff) m = C ⋅ (∆Jeff, el + ∆Jeff, pl) m , (1) is applied to calculate the crack growth increment per cycle, da/dn.
In general, ∆Jeff, el can be derived from the stress intensity factor ∆Keff using Eq. (2) ∆Jeff, el = (∆Keff) 2/E' = (∆Seff ⋅Yel) 2⋅π⋅a/E'
∆Jeff, pl = ∆Jeff, el⋅Ypl = ∆Jeff, el⋅ζ⋅( ∆Seff/∆Sref) 1/n'-1, (3) where n' is the material's cyclic hardening exponent and ζ and ∆Sref have been calibrated to reflect results of an extensive finite element investigation [8]. n' can be determined by fatigue tests on smooth specimens or approximated by means of the Uniform Material Law [9].
To evaluate ∆Seff in Eqs (2) and (3), an experimentally verified analytical procedure according to Savaidis et al. [10] is applied within the framework of the present crack growth model.

Ke et al., “Electrospun polystyrene nanofibrous membranes for direct contact membrane distillation,” J.
El-Shazly, N.
El-Shazly, M.
Celebi et al., “Ultimate permeation across atomically thin porous graphene,” Science (80-.)., vol. 344, no. 6181, pp. 289–292, 2014
El-moneim, and M.

Tour et al; 2014.
Gueye et al; 2017 with lower thermal response time of ⁓ 50 s [30].
El-basaty, E.
Lin et al., ‘Laser-induced porous graphene films from commercial polymers’, Nat.
El-moneim, E.

An ohmic contact was formed on p-type region by deposition of Al and Ti by magnetron sputtering and annealing at 1100o C.
EL spectrums of diodes were measured in temperature range 300- 600 K on a LOMO spectrometer using photon counting system.
In Fig. 3,4 are presented temperature dependence of EL green band intensity in: 6H-SiC pn diodes, grown by SEV and irradiated by fast electrons [9]; 6H-SiC diodes with pn junction formed by implantation of Al ions [10]; 3C-SiC pn diodes, grown by SEV[12] and obtained in this work in p+-3CSiC/n+ -6H-SiC hetero diodes.
Intensity of the presented at EL spectrum of this samples green band (2.357 eV) has the same temperature and forward current dependences as for free-exiton EL in 3CSiC pn junctions.
[7] N.S.Savkina, A.A.Lebedev, A.M.Strel'chuk, A.S.Tregubova et.al: Mat.Sci.Eng.

Al2O3/Al-4%Cu alloy composites were manufactured by squeeze casting.
An Al-4% (wt) Cu alloy was chosen as the matrix material.
The preform was infiltrated by Al melt.
Abd El-Azim, M.
El-Baradie: Materials Letters Vol. 56 (2002), p. 963

In three-layer device an extra layer, (EL) is located between (HTL) and (ETL).
Electrical Measurements The I-V characteristics of the hybrid QDOLEDs achieved by the ITO/PEDOT: PMMA/QDs/Alq3/Al and ITO/PEDOT:PMMA/QDs/Alq3/TPBi/Al.
(a) Fig. 5: I-V forward characteristics of the hybrid OLEDs devices: (a) ITO/PEDOT:PMMA/QDs/Alq3/Al and (b) ITO/PEDOT:PMMA/QDs/Alq3/TPBi/Al.
Electroluminescence Measurements The EL measurements in fig.7 were approved out using a photomultiplier detector at room temperature, and the lower limit of voltages for white light which has been achieved experimentally from fig.4 which are 6V for PEDOT:PMMA/0.1%wt QDs/Alq3 and 4V of PEDOT:PMMA/0.1%wtQDs/Alq3/TPBi hybrid organic light emission devices respectively. 540 nm 460 nm 610 nm 540 nm 440 nm 610 nm a)) b)) Fig. 7: EL spectrum of hybrid OLEDs devices: (a) ITO/PEDOT:PMMA/QDs/Alq3/Al and (b) ITO/PEDOT:PMMA/QDs/Alq3/TPBi/Al.
Table 1: EL coordinates for hybrid organic light emitting devices.

Table 3 High strength titanium alloys researched in China and their typical properties alloy composition (w.t.%) UTS (MPa) Toughness K1c (MPa M ) αk(J/cm 2 ) β21S Ti-15Mo-3Al-2.7Nb-0.2Si 1200 50 TC21 Ti-Al-Sn-Zr-Cr-Mo-(Nb-Ni-Si) 1100 70 Ti-B19 Ti-Al-Mo-V-Cr-Zr 1250 70 Ti-26 Ti-15-3+Zr+Nb 1250 Ti-B18 Ti-Al-Mo-Zr-Sn 1300 50 Ti-B20 Ti-Al-Mo-Zr-Sn-Fe 1300 50 Titanium composites.
HE130, a Ti-Al-V-Mo-Fe-B system alloy, is a α+β high elastic Ti alloy.
Ti811ZB, a Ti-Al-Mo-Zr-B system alloy, is a near α high elastic Ti alloy.
Table 7 High elastic Ti alloys being researched in China and their typical properties Designation UTS(MPa) El(%) E(GPa) Composition(w.t%) HE130 1000 6 130 Ti-Al-V-Mo-Fe-B Ti811ZB 1100 6 125 Ti-Al-Mo-Zr-B Low cost titanium alloys.
Table 8 Low cost Ti alloys being researched in China and their typical properties Tensile at RT Tensile at 4000 C UTS YS EL RA UTS YS EL RA Alloy MPa MPa % % MPa MPa % % Composition (w.t%) Ti8LC 1050 990 12 30 700 600 15 50 Ti-Al-Fe-Mo Ti12LC 1100 1050 12 40 900 800 15 50 Ti-Al-Mo-Fe Corrosion resistant titanium alloys.

[3] Estimation of Crystalline Size of Deformed 5251 Al Alloy using PALT and XRD Techniques M.
El-Sayed, A.
Badawia Faculty of Science, Physics Department, El- Minia University, El-Minia, Egypt aemadbadawi@yahoo.com Keywords: Al Alloys, Grain Size, Plastic Deformation, Positron Annihilation Lifetime, XRD Abstract Certain radioactive isotopes decay by emitting positrons, and the positrons can be used to probe the structure of solid materials.
Some measurements had been pervious performed on alloys by MacKee et al. [12], Xianyi et al., [14], Weiming et al. [15], Abdelrahman [16] and Dupasquier et al. [17].
The source - sample configuration was then wrapped in a thin Al foil.

Hassan et al [1, 5-10], El-Axir et al [11, 12] and Klocke et al [13].
Al-Bsharat: J.
Al-Bsharat: Wear Vol. 199 (1996), p. 1 [9] A.M.
El-Axir: Int.
El-Khabeery: J.