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However, surface produced by fixed abrasive grinding of optical materials is characterized by considerable sub-surface damage, micro-crack (on the order of the abrasive grain size).
The soft specifies angles and accelerations for the angle controller, the number of sweeps required between positive and negative angles, and the total estimated processing time.

Adsorbent also can adsorb a large number of activated short life active substances in plasma discharge space or material to produce highly active free radicals before discharge.
Plasma-iron electrical material combination technology Filling iron electrical grain in discharge area can improve discharge form.

In the past decades, Si-based light emitters have been pursued by a number of attempts, such as silicon nanocrystals (Si NCs) [10], porous silicon (PS) [11], dislocation engineered silicon [12], surface-textured bulk silicon [13], Si/SiO2 superlattices [14], tensile-strained Ge-on-Si structures [15], and Er-doped silicon-rich silicon oxides (SRSO) [16].
Although the diameters of nanowires obtained here are larger than the generally accepted dimensions for carrier confinement in wires (3 nm) [11], the dimensions of skeleton of the nanoporous structures and the grain sizes of embedded Si NCs are comparable with this value.

To improve the problem, it would be necessary to have the following property before sintering process; (1) the particle size is small, (2) the grain size distribution is narrow, (3) the shape is spherical.
Number density of cores decreased very much after staining.

The brittleness and grain interface fracture of high Cr and Cr-Mo cast steels can be controlled by moderate contents of aluminum and nitrogen elements plus sustaining temperature out of 900~1200℃ range[6].
the cyclic stressing number of 10 7 cycles.

Based on this idea, numbers of experiments with good results have been carried out by various groups upon both bulk and thin film composite materials [6-8].
All multilayer films have a similar surface morphology with a grain size of ~30 nm.

Second, simulation with variable parameters was designed, such as wavelength ranges (250 - 2500 nm) and number of layers [Glass/Al/SiO2/Air].
But the continued increase of Al film thickness after 90 nm, the reflective film cannot overcome the roughness increment of the grain surface, which leads to a more serious light scattering to affect the reflectivity negatively [17].

The demand for large numbers of micro-optical aspherical lenses with low surface roughness has prompted the investigation into new processing method of aspherical lenses [1].
(7) where is the spherical grain diameter.

The microstructures of the three areas are significantly different, the grain sizes being the largest in the HAZ.
Crack initiation sites Number Percent TA15 sheet 1 4.4% Weld zone 7 30.4% HAZ 15 65.2% Fig.3 Fracture of welded specimens Table 2 Statistics of crack initiation sites Through macroscopic observation and statistical analysis of the tested specimens, it was found that most of the fatigue cracks were initiated at weld defects such as voids and inclusions in the HAZ and at the edge of the weld.

Being the maximum depth of cut taken by a cutting grain, hmax is illustrated in Fig.2 and can be expressed as [8] s p s w d a v v C h ⋅�� � � �� � � ⋅ ⋅ = θtan 3 max , (1) where vs is the peripheral speed of the grinding wheel, θ is the semi-included angle for the A/D Dynamometer Diamond wheel n vw Powermeter Connect to spindle PC Ceramic Oilstone undeformed chip cross-section, and θ=60 degrees is often taken as a typical value [7-9].
For each undeformed chip as shown in Fig.2, the plowed surface area Ag generated at the sides of groove is given by θcos max c g Lh A = . (4) The rate of plowed surface area generated per unit width Sw can be calculated as Ag multiplying by the number of cutting points per unit time per unit width as gsw ACvS = . (5) In the present study, the measured power per unit width in grinding of silicon nitride is plotted versus the corresponding values of Sw in Fig.8, which falls well to a linear relationship of Eq.3.