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DYNAMIC-MECHANICAL ANALYSIS OF POLYESTER COMPOSITES REINFORCED WITH GIANT BAMBOO (DENDROCALMUS GIGANTEUS) FIBER Sergio Neves Monteiro1.a, Frederico Muylaert Margem2.b, Lucas Barbosa de Souza Martins2.c, Rômulo Leite Loiola2.d, Michel Picanço Oliveira1.e. 1- IME: Military Institute of Engineering, Department of Materials Science, Praça General Tibúrcio, 80, 22290-270, Rio de Janeiro, Brazil. 2- UENF: State University of the Northern Rio de Janeiro, Advanced Materials Laboratory, Av.
The cylindrical shape of the culm is, however, a limitation for its direct use in engineering systems.
Forum Vol.638-642 (2010), p. 961

Sato for their technical support in the X-ray diffraction and resistivity measurement at Graduate School of Engineering, Tohoku University, Japan.
Forum 966 (2019) 314-318
Koike, Possible exisences of the stripe correlations in electron-doped superconducting cuprates Eu1.85Ce0.15Cu1-yNiyO4+α-δ studied by muon-spin-relaxation, Advanced Materials Research 896 (2014) 354
Series: Materials Science and Engineering 196 (2017) 012012

Vezzetti, Model-based definition design in the product lifecycle management scenario, International Journal Of Advanced Manufacturing Technology, 52(2011) 1-14
Kheddouci, Will Model-based Definition replace engineering drawings throughout the product lifecycle?
Ríos, Assembly work instruction deployment using augmented reality, Key Engineering Materials, 502(2012) 25-30
Jiang, Study on Visual Assembly Process Planning System Based on 3DVIA Composer, Advanced Materials Research, 179-180(2011) 734-739
Aubry, Supporting design with 3D-annotations in a collaborative virtual environment, Research In Engineering Design, 20(2009) 149-155

Nürnberger, Structural evolution of thin lamellar cementite during cold drawing of eutectoid steels, Procedia Engineering. 81 (2014) 694-699
Kustra, The multi-scale FEM simulation of the drawing processes of high carbon steel, Journal of Achievements in Materials and Manufacturing Engineering, 23 (2007) 71-74
Kuziak, Computer Simulation of Transformation during TRIP Steel Rod Drawing, Key Engineering Materials, 716 (2016) 620-631
Xie, Deformation of cementite in cold drawn pearlitic steel wire, Materials Science and Engineering A, 608 (2014) 11-15
Fang, Effect of Reserved Texture on Mechanical Properties of Cold Drawn Pearlitic Steel Wire, Advanced Materials Research, 936 (2014) 1948-1952

(2) Advanced logistics management.
Conclusion Practice proved both at home and abroad, the advanced production ability cannot form by the single advanced technology, single technology must be integrated and productivity will be form.
Annual Forum Proceedings -American Heli-copter Society. 1994, 3: 677~689
Research on concurrent engineering-orient-ed integrated product information model [J].

A more advanced specialization, often found in the virtual organisations, gives a plus in terms of efficiency and productivity by an optimized business process.
The general schema is intended for the case of a multi-org enterprise in the field of a manufacturing-to-order, engineering-to-order or a project based enterprise.
Buchanan, Usage Guide for the STEP PDM Schema V1.2, Release 4.3, PDM Implementor Forum, Darmstadt, 2002

Langdon2,3,c 1Department of Metallurgical and Materials Engineering, Universidade Federal de Minas Gerais, Belo Horizonte 31270-901, Brazil 2Materials Research Group, Faculty of Engineering and the Environment, University of Southampton, Southampton SO17 1BJ, UK 3Departments of Aerospace and Mechanical Engineering & Materials Science, University of Southern California, Los Angeles, CA 90089-1453, U.S.A.
Langdon, The Requirements for Superplasticity with an Emphasis on Magnesium Alloys, Advanced Engineering Materials 18(1) (2016) 127-131
Langdon, Developing grain refinement and superplasticity in a magnesium alloy processed by high-pressure torsion, Materials Science and Engineering A 488(1-2) (2008) 117-124
Langdon, Record Superplastic Ductility in a Magnesium Alloy Processed by Equal-Channel Angular Pressing, Advanced Engineering Materials 10 (2008) 37-40
Kim, Evolution of microstructure and hardness in AZ31 alloy processed by high pressure torsion, Materials Science and Engineering A 625 (2015) 98-106

Clauws1 1 Dep. of Solid State Sciences, Ghent University, Krijgslaan 281 S1, B-9000 Ghent, Belgium 2 Materials Design Division, Faculty of Materials Science and Engineering, Warsaw University of Technology, Wołoska 141, 02-507 Warsaw, Poland 3 Umicore EOM, Watertorenstraat 33, B-2250 Olen, Belgium a jan.vanhellemont@telenet.be Keywords: germanium, silicon, vacancies, voids, simulation, oxygen, precipitation, FTIR Abstract.
Due to its higher intrinsic carrier mobility compared to silicon, however, the use of moderately doped germanium based substrates is being reconsidered for application in advanced nano-electronic devices. 200 and 300 mm germanium (001) oriented dislocation free substrates have recently become available and germanium on insulator (GeOI) substrates are being developed [1].
Mijlemans: Defect and Diffusion Forum 230-232 (2004), p. 149 [3] A.
Forum 15-18 (1987), p. 369 [15] H.D.
Dupret: Material Science and Engineering 28 (2000), p. 149 [29] S.

Brosselard, Edge termination design improvements for 10 kV 4H-SiC bipolar diodes Materials Science Forum Vols. 740-742 (2013), 609-612
Le Ru, Spot Size Engineering in Microscope-Based Laser Spectroscopy, J.
Brosselard Precise automated semiconductor characterization under ambient control (PASHAC) – An advanced test bench for high-voltage semiconductor.
ISH – International Symposium on High Voltage Engineering, Pilsen, Czech Republic [9] Synopsys, (2019 09 19) Sentaurus TCAD, Retrieved from: https://www.synopsys.com/content/ dam/synopsys/silicon/datasheets/sentaurus_ds.pdf [10] J.
Phung Near breakdown voltage optical beam induced current (OBIC) on 4H-SiC bipolar diode Materials Science Forum Vol. 924 (2018) pp 577-580

The small conduction band offset suggests the potential need for further interface engineering and/or a buffer layer to minimize electron injection into the gate oxide.
Introduction The engineering of a high-quality SiC-dielectric interface is critical to the development of SiC power MOSFETs [1].
The small conduction band offset suggests a low barrier for electron injection which may necessitate further engineering of the interface.
Forum Vols. 457-460 (2004), p. 1275
Agarwal: Advances in Silicon Carbide Processing and Applications (Artech House, Norwood 2004)