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Electroactive strain values up to 380 % have even been obtained when a silicone rubber was utilized as the matrix material. [1] Although such extraordinary results have drastically increased the potential of EAPs, it should be noted that these data were obtained under quite high values of the driving electric field, i.e., 120 MV/m.
A reduction of the required energy is thus desired for a widespread use of EAPs.
Many electroactive strain properties of the PU were investigated but the fundamental mechanisms which are responsible for the electrostriction have not been yet well understood. [10] We found that the thermal absorption on melting of differential scanning calorimetry (DSC) analysis often corresponds to data of electrostriction. [11] Crystalline volume fraction may contribute to the electrostriction.
If the volume fraction of surface crystallization on solidification is controlled by solidification thickness, the experimental error can be explained to obtain the reproducible data.

One of the dose reduction techniques is use of the pulsed emitting source synchronized with the detection equipment.
For example, it is necessary about three-four minute for the thermoluminescent dosimeters thermal treatment and programme data analysis.
The detecting part of the dosimeter-radiometer DCS-96 is located in the same case with analyzed unit and data panel, which creates difficulties of working at high dose rates.
The anode current picked out according to the dosimeter DRG3-04 operating mode of the dose rates, which was specified in the data sheet [6].

The data represents the mean values of duplicate experiments, and error bar indicates the standard deviation.
The data represents the mean values of duplicate experiments
Chlorophenols strongly absorb radiation with wavelengths between 230 and 300 nm, and undergo photochemical processes, involving photo-dissociation, photo-isomerization, photo-substitution, photo-rearrangement, photo-oxidation and photo-reduction.
The data represents the mean values of duplicate experiments, and error bar indicates the standard deviation.

The thermal properties of the rotary kiln directly affect the qualities of products while itsthermal characteristics can be significantly affected by the kiln temperature[1,2].Since the thermal characteristics of rotary kiln is complex, accurate analysis of the structure and properties of the rotary kiln generally requires a gas-solid coupling simulation,which makes it difficult to analyze gas combustion, gas-solid coupling and the thermal stress of the rotary kiln at the same time.Current research on the temperature field and thermal stress field of rotary kiln relies on the use of known test temperature or the use of known heat transfer coefficient as boundary conditionsis loaded into the model construction[3,4].However,these known data are derived from manuals or literatures,but not based on the rigorous combustion analysis and numerical calculation of the heat transfer process of rotary kiln,besides,thetemperature field distribution is non-linear.
According to the data from actual measurement and referential manual[4], the main physical parameters of material in rotary kiln studied in this paper as listed in Table 2.
ANSYS thermal stress analysis software on the rotary kiln 3.1 Data interpolation of the CFD results The main challengefor the thermal stress analysis of the rotary kilns is to make use of the rotary kiln’s temperature field obtained by FLUENT in ANSYS.
(In Chinese) [7] M.S.Manju,S.Savithri, Three dimensional CFD simulation of pneumatic coal injection in a direct reduction rotary kiln.

The load-displacement data (Fig. 2a) display linear correlations for all types of samples.
Fig. 2. a) Load-displacement data of a thin (35 µm) monolithic diamond foil (M) and of laminates with two (2L) and four (4L) layers of diamond recorded during the B3B test.
A promising observation was the reduction of strength variation with increasing number of diamond layers.
[7] Technical Data Sheet BrazeTec CB2, Saxonia Technical Materials GmbH

Conclusion In the process of discharge-induced fragmentation of chloroform according to the data of Fig. 2, preferential 1,1-elimination of hydrogen chloride ensures the generation of dichlorocarbene.
According to the data obtained, the valence-unsaturated fragment of CCl is likely to be involved in the recombination process with the formation of dichloroacetylene in a wide temperature range (1400-2200 K).
In conclusion, we note that the simulation carried out does not affect the conditions of formation, in particular, liquid products, which, according to the experimental data, were found only in trace amounts.
Rusanov, Slag-free process for plasma reduction of uranium from oxide raw material, Fizika i himiya obrabotki materialov. 4 (2000) 46–54

However, recently zinc oxide nanoparticles doped with samarium or Sm and Ag were proven as promising highly active photocatalyst under solar light or ultraviolet illumination due to improved charge separation, reduction of band gap, increased absorption of light in the visible region and stability [4-6].
It indicated that in contrary of literature data [4, 5] all amount of Sm2O3 was not enclosed in ZnO lattice.
Therefore, results confirmed literature data [5] that ZnO doping with Sm2O3 enhances photocatalytic activity.
On the other hand, contrary to literature data photocatalysts showed maximal activity at the content of Sm2O3 in the range of 2.1–3.0 wt.%.

The reaction quenching and sampling times were deducted from chronoamperometry (CA) data, as the current signal reflects the changes in reaction type and rate at any given time.
Additionally, during the sputtering process, the oxide layer penetration time can be measured and the layer thickness calculated using calibration data and standard equations.
This finding is also to some extent supported by the CA data.
Summary It was found that all three salts were corrosive, and that the oxidation current reflected the oxidation-reduction reactions, thus revealing a difference in reaction mechanisms and rates between the salts.

A significant reduction of deep level defects, in particular, the suppression of the Z1/Z2 defect (which has been associated with the lifetime decay in 4H-SiC semiconductors [9]), and enhanced carrier lifetimes were recently observed for samples subjected to anneal temperatures up to 2600o C and a cool down rate of ~2o C/min [10].
Optimum data were obtained between 10 and 80 K using both absorption and rapid passage conditions.
The samples were mechanically polished after each annealing to remove roughness before PL data was taken.
These results, however, are in good qualitative agreement with our P6/P7 EPR data for similar anneals and Fig. 5.

Tabela 1 XRD data of Ba2AlSnO5,5 ceramics 2θ D[Å] I/I0 hkl 19,908 4,456 33,22 1 1 1 26,885 3,3134 16,94 2 0 0 30,990 2,8833 100 2 2 0 34,614 2,5892 28,66 3 1 1 40,422 2,2296 22,31 2 2 2 44,252 2,0450 34,36 4 0 0 46,772 1,9406 5,7 4 2 0 54,835 1,6728 39,25 4 2 2 64,169 1,4502 14,82 4 4 0 72,847 1,2973 14,01 6 2 0 81,042 1,1855 6,35 5 3 3 89,116 1,0978 13,84 6 4 2 For double cubic perovskite of the formula A2BB'O6 the intensity, in particular of the (111) and/or (311) superstructure reflection, is proportional to the difference in scattering power of the B and B' atoms, when all the atoms are situated in the ideal position [8].
The lattice parameter of Ba2AlSnO5.5, calculated from the experimental XRD data is aexp = a = 8,1487Å This value is in good agreement with theoretical lattice parameter value a = 7,9432Å of Ba2AlSnO5.5.
XRd diffraction data of ceramics are presented in Table 1.
The liquid at high temperature facilitates mass transport by liquid phase mechanism and results with the reduction of solid - liquid dihedral angle, which increases the wettability and thus the liquid drags the grain towards each other.