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Effect of Nano ZrO2 Additions on the Mechanical Properties of Ti-12Mo Composite by Powder Metallurgy Route Ahmed El-Tantawy1,a,*, Omayma El-Kady2,b, Hossam.
Osiceanu, et al., Microstructural and mechanical properties, surface and electrochemical characterisation of a new Ti-Zr-Nb alloy for implant applications, J.
El-Kady, H.
El-Kady, A.
Effect of SiC particle size on the physical and mechanical properties of extruded Al matrix nanocomposites.

Al-Chaar et al.[3] have indicated that failure mechanisms can be predicted by a combination of the shear strength, compressive strength, and geometry of the infill in concrete frames.
Based on the above, El-Dakhakhni et al[12] have proposed a three-strut model for masonry-infilled steel frames, as shown in Fig. 1.
El-Dakhakhni’ three-strut model Fig. 2.
These specimens (Specimens 6 and 7) were tested by Mehrabi and Shing et al.[4].
El-Dakhakhni, M.

and dsakaki@mech.okayama-u.ac.jp Keywords: Al-Si-Cu alloy, Al-Si-Ge alloy, fatigue test, tensile test, precipitate-free zone, microstructure, grain boundary, aging, vacancy.
Materials and Methods Al-1.2%Si alloy ingots were cast by melting 99.996% Al, 99.999% Si, 99.999%Cu and 99.999%Ge in a high purity alumina crucible in air.
Experimental Results and Discussion Fig. 1 shows the relation between aging time (tA) and mechanical properties in Al-1.2%Si alloy and Al-1.2%Si-0.1%Cu alloy.
Fig. 2 Variation in proof stress (σ0.2), tensile strength (σB), and elongation to failure (El), with aging time ( tA).
(a) Al-1.2%Si-0.1%Cu, (b) Al-1.2%Si-0.1%Ge

El-Hofy2,a, Hassan A.
Mohamed El-Hofy et al. [18], presented an experimental study and statistical analysis for cutting 2 lay-up configurations of multidirectional CFRP laminates.
Material preparation, data collection, and analysis were performed by HA El-Hofy, M.
Abd-Alrazzaq, and MH El-Hofy.
Procedia CIRP, 68, 535–540. doi:10.1016/j.procir.2017.12.109 [19] HA Youssef, HA El-Hofy, AM Abdelaziz, and MH El-Hofy (2020) Accuracy and Surface Quality of Abrasive Waterjet Machined CFRP Composites.

Abdel-Rahman, Alaa El-deen A.
El-Nahhas and M.
Abdel-Rahman Faculty of Science, Physics Department, El-Minia University, P.O. 61519 El-Minia, Egypt *emadbadawi@yahoo.com Keywords: Age-Hardening, Aluminum Alloys, Hv Values, Positron Mean Lifetime Values Abstract Many Aluminum-based alloys are strengthened by using a heat-treatment process known as age-hardening.
Al-6063 has balanced Mg-Si, to form stoichiometric Mg2Si; on the other hand, Al-6066 has both Cu and excess Si.
Matsuda, K., Teguri, D., Uetani, Y., Sato, T. and Ikeno, S., “Cu-Segregation at the Q/α-Al Interface in Al–Mg–Si–Cu Alloy”, Scripta Materialia, 47, 833- 837, 2002 4.

.%] area 1 el 84,1 80,7 10,9 10,6 4,3 8,3 0,001 0,002 0,157 0,210 area 2 el 84,1 79,6 10,2 9,8 5,2 9,9 0,21 0,463 0,081 0,106 area 3 el 84,0 79,5 10,3 9,9 5,3 10,1 0,065 0,142 0,158 0,209 area 4 el 84,2 80,0 10,5 10,1 5,0 9,6 0,004 0,009 0,11 0,146 area 5 el 84,0 79,8 10,7 10,3 4,9 9,4 0,111 0,241 0,146 0,193 EDAX error 2,01 0,3 0,25 0,05 0,03 The experimental results were taken in element list working model, when the operator can choose and select a list of chemical elements.
The alloy present very small variations of the percentages of chemical elements along the ingot with the next mean values on longitudinal axis: Fe: 84.148 (el) wt%, Mn: 10.560 (el) wt%, Si:) and 5.023 (el) wt%, Mg: 0.079 (el) wt% and Ca: 0.131 (el) wt%.
The alloy present very small variations of the percentages of chemical elements along the ingot with the next mean values on longitudinal axis: Fe: 84.148 (el) wt%, Mn: and 10.560 (el) wt%, Si: 5.023 (el) wt%, Mg: 0.079 (el) wt% and Ca: 0.131 (el) wt%.
Morikawa et al., Development of low rigidity 𝛽-type titanium alloy for biomedical applications, Materials Transactions, 43 (2002), 2970–2977 [5] J.
Hort et al., In vitro mechanical and corrosion properties of biodegradable Mg-Ag alloys, Materials and Corrosion, 65 (2014), 569–576 [7] R.

The structure of the organic electroluminescent device is ITO/α-NPD/ Alq/DDPQL/LiF/Al.
Fig. 1 The synthesis of bis (2,3-diphenylquinoxaline) The EL device has the structure of a glass/ITO/α-NPD(50nm)/Alq(30nm)/DDPQL(30nm)/ LiF (0.5nm)/Al(100nm), was shown in Fig. 2.
The EL spectrum of device obtained by green light, the peak was close to 539nm from Alq (Fig. 4).
Fig. 4 Electroluminescent spectrum of ITO/α-NPD/Alq/DDPQL/LiF/Al The highest luminance of ITO/α-NPD/Alq/DDPQL/LiF/Al was 12,100cd/m² at 13.5V.
Fig. 5 Luminance-voltage characteristic of ITO/α-NPD/Alq/DDPQL/LiF/Al Fig. 6 Current density-voltage characteristic of ITO/α-NPD/Alq/DDPQL/LiF/Al Conclusions A new generation of diphenylquinoxaline dimer compounds has been synthesized and characterized.

The relationships between ∆σth and c are shown in Fig. 4 that were calculated using El Haddad et al.'
In Fig. 4, the lengths of non-propagation cracks are also shown that were observed by El Haddad et al.
The results of the present analysis predict well the experimental results obtained by El Haddad et al.
The predicted results were in reasonable agreement with the experimental results observed by El Haddad et al. and Frost .
El Haddad, T.H.

Al-Arabi et al. [8] made numerical investigation of developing buoyant convection in vertical annulus using finite difference method for different radius ratios considering two thermal boundary conditions, namely either inner or outer wall is maintained at constant temperatureand other wall is insulated.
El-Shaarawi, A.
Al-Arabi, M.A.I.
El-Shaarawi, M.
El-Shaarawi, M.K.

Lastly, the drift in parameters observed in some of the devices, are additionally correlated by an electroluminescence (EL) and scanning acoustic tomography (SAT) analysis.
After the stress testing, the devices are post-evaluated using EL and SAT to identify the root cause of observed parameter drifts and confirm the bipolar degradation.
From the captured EL images, creation of only minor stacking faults is observed although the devices are stressed at these extreme current densities.
Stahlbush et al., “Effects of Basal Plane Dislocations on SiC Power Devices Reliability”, 2018 IEEE International Electron Device Meeting (IEDM) [5] A.
Kato et al., Observation of carrier recombination in single Shockley stacking faults and at partial dislocations in 4H-SiC, J.