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Lastly, the drift in parameters observed in some of the devices, are additionally correlated by an electroluminescence (EL) and scanning acoustic tomography (SAT) analysis.
After the stress testing, the devices are post-evaluated using EL and SAT to identify the root cause of observed parameter drifts and confirm the bipolar degradation.
From the captured EL images, creation of only minor stacking faults is observed although the devices are stressed at these extreme current densities.
Stahlbush et al., “Effects of Basal Plane Dislocations on SiC Power Devices Reliability”, 2018 IEEE International Electron Device Meeting (IEDM) [5] A.
Kato et al., Observation of carrier recombination in single Shockley stacking faults and at partial dislocations in 4H-SiC, J.

It also showed potential effects in refining the α-Al phase [[] W.
El-Hadad, Light Metals 2016, 821-825. ].
El-Aziz, M.
El-Hady, W.
El-Hadad, Y.

Effect of Nano ZrO2 Additions on the Mechanical Properties of Ti-12Mo Composite by Powder Metallurgy Route Ahmed El-Tantawy1,a,*, Omayma El-Kady2,b, Hossam.
Osiceanu, et al., Microstructural and mechanical properties, surface and electrochemical characterisation of a new Ti-Zr-Nb alloy for implant applications, J.
El-Kady, H.
El-Kady, A.
Effect of SiC particle size on the physical and mechanical properties of extruded Al matrix nanocomposites.

Finally, a LiF(1.0nm) buffer layer and Al cathode were vapor-deposited at a background pressure of 10 -6 Torr onto organic films.
Figure 2 shows the normalized EL spectra of devices having different DPVBi thickness at 13V.
The brightness reached 8496 cd/m2 at 16V (EL efficiency is 0.24lm/W) and CIE coordinates were (0.32, 0.28).
As the thickness of DPVBi increases, the DPVBi blue EL spectra increases.
Wavelength (nm) Fig.2.Normalized EL spectra of the devices having different DPVBi thickness at 13V Fig.3.

El-Hofy1a, A.
El-Taabl2, A.
Elkhatib1 1Physics Department, Faculty of Science, Menoufia University, Shebin El Koom, Egypt 2Chemistry Department, Faculty of Science, Menoufia University, Shebin El Koom, Egypt aelhofy2000@yahoo.com Keywords: Grain Boundary Parameters, Gd2O3, J-E Characteristics, Microstructure, Pr6O11, ZnO Abstract To the best of our knowledge the difference in the magnetic properties of ions like Gd (7.94 μB) and Pr (3.58 μB) on the electrical properties of ZnO-varistor have not been studied.
The first ZnO varistor system was developed by Matsuoka et al. in 1969 [1, 4].
The first gapless-type of ZnO surge arrester was reported by Kobayashi et al. [17] and Sakshaug et al. [18] in 1977.

Lee et al. [20].
When the thickness of LCBP in the device increases, there is a tendency that the peak position of EL spectrum is blue shift and that the intensity of EL spectrum is enhanced.
Thus, the EL peak is gradually shifted to the wavelength of 390 nm with the thick LCBP layer.
EL spectra in ITO/ NPB(40 nm)/ CBP(x nm)/ DPVBi(15 nm)/ CBP(10-x nm)/ Alq3(20 nm)/ LiF(0.5 nm)/ Al(100 nm) devices with double-CBP layers (left-CBP 0, 2, 4, 6, 8 and 10 nm; right-CBP 10, 8, 6, 4, 2 and 0 nm).
The inset shows EL spectra in ITO/ NPB(40 nm)/ CBP(x nm)/ DPVBi(15 nm)/ CBP(10-x nm)/ Alq3(20 nm)/ LiF(0.5 nm)/ Al(100 nm) devices with double-CBP layers (left-CBP 0 and 2 nm; right-CBP 10 and 8 nm).

Abdel-Rahman, Alaa El-deen A.
El-Nahhas and M.
Abdel-Rahman Faculty of Science, Physics Department, El-Minia University, P.O. 61519 El-Minia, Egypt *emadbadawi@yahoo.com Keywords: Age-Hardening, Aluminum Alloys, Hv Values, Positron Mean Lifetime Values Abstract Many Aluminum-based alloys are strengthened by using a heat-treatment process known as age-hardening.
Al-6063 has balanced Mg-Si, to form stoichiometric Mg2Si; on the other hand, Al-6066 has both Cu and excess Si.
Matsuda, K., Teguri, D., Uetani, Y., Sato, T. and Ikeno, S., “Cu-Segregation at the Q/α-Al Interface in Al–Mg–Si–Cu Alloy”, Scripta Materialia, 47, 833- 837, 2002 4.

and dsakaki@mech.okayama-u.ac.jp Keywords: Al-Si-Cu alloy, Al-Si-Ge alloy, fatigue test, tensile test, precipitate-free zone, microstructure, grain boundary, aging, vacancy.
Materials and Methods Al-1.2%Si alloy ingots were cast by melting 99.996% Al, 99.999% Si, 99.999%Cu and 99.999%Ge in a high purity alumina crucible in air.
Experimental Results and Discussion Fig. 1 shows the relation between aging time (tA) and mechanical properties in Al-1.2%Si alloy and Al-1.2%Si-0.1%Cu alloy.
Fig. 2 Variation in proof stress (σ0.2), tensile strength (σB), and elongation to failure (El), with aging time ( tA).
(a) Al-1.2%Si-0.1%Cu, (b) Al-1.2%Si-0.1%Ge

The relationships between ∆σth and c are shown in Fig. 4 that were calculated using El Haddad et al.'
In Fig. 4, the lengths of non-propagation cracks are also shown that were observed by El Haddad et al.
The results of the present analysis predict well the experimental results obtained by El Haddad et al.
The predicted results were in reasonable agreement with the experimental results observed by El Haddad et al. and Frost .
El Haddad, T.H.

The structure of the organic electroluminescent device is ITO/α-NPD/ Alq/DDPQL/LiF/Al.
Fig. 1 The synthesis of bis (2,3-diphenylquinoxaline) The EL device has the structure of a glass/ITO/α-NPD(50nm)/Alq(30nm)/DDPQL(30nm)/ LiF (0.5nm)/Al(100nm), was shown in Fig. 2.
The EL spectrum of device obtained by green light, the peak was close to 539nm from Alq (Fig. 4).
Fig. 4 Electroluminescent spectrum of ITO/α-NPD/Alq/DDPQL/LiF/Al The highest luminance of ITO/α-NPD/Alq/DDPQL/LiF/Al was 12,100cd/m² at 13.5V.
Fig. 5 Luminance-voltage characteristic of ITO/α-NPD/Alq/DDPQL/LiF/Al Fig. 6 Current density-voltage characteristic of ITO/α-NPD/Alq/DDPQL/LiF/Al Conclusions A new generation of diphenylquinoxaline dimer compounds has been synthesized and characterized.