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33 increasing bias CIE Y CIE X 7V 10V 13V Intensity (a.U. ) Wavelength (nm) Fig. 2. Normalized EL spectra of the devices having different DPVBi thickness at 13V Fig. 3. EL spectra of device c at 7, 10, 13V, the inset is the CIE coordinates of device (c) from 4 to 16V Fig. 4 Current density-voltage and brightness-voltage characteristics of the device (C), the inset is the power efficiency -voltage characteristics of device (C) 2 4 6 8 10 12 14 16 0 2000 4000 6000 8000 10000 0 200 400 600 800 1000 1200 2 4 6 8 10121416 -0. 5.
DOI: 10.1109/55.82057
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