Molecular Organic White Light-Emitting Devices Fabricated by a Simple Way through Nondoped Process

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we designed and fabricated a white organic light-emitting device based on{[2-methyl-6-[2-(2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9yl)ethenyl]-4H-pyran-4-ylidene] propane-dinitrile}ultrathin layer and 4,4 ´ -bis(2,2 ˊ diphenylvinyl)-1,1 ˊ -biphenyl. It shows a maximum power efficiency of 1.8l m/W at 4 V (the brightness is 51 cd/m2). Its brightness reaches 8496 cd/m2 at 16 V. And the chromaticity coordinates varying from (0.42,0.34) to (0.32,0.28) with the forward bias from 4 to 16 V are well within the white region.

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Periodical:

Materials Science Forum (Volumes 475-479)

Main Theme:

Edited by:

Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie

Pages:

1905-1908

Citation:

Z. J. Wu et al., "Molecular Organic White Light-Emitting Devices Fabricated by a Simple Way through Nondoped Process", Materials Science Forum, Vols. 475-479, pp. 1905-1908, 2005

Online since:

January 2005

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$38.00

[1] J. Kido, M. Kimura and K. Nagai: Science. Vol 267 (1995) p.1332.

[2] C.H. Kim and J. Shinar: Appl. Phys. Lett. Vol 80 (2002) p.2201.

[3] J. Kido, H. Shionoya and K. Nagai: Appl. Phys. Lett. Vol 67 (2002) p.2201.

[4] J. Feng, F. Li, W.B. Gao, S.Y. Liu and Y. Wang: Appl. Phys. Lett. Vol 78 (2001) p.3947.

[5] C. Hosokawa, M. Eida, M. Matsuura, K. Fukuoka, H. Nakamura and T. Kusumoto: Synth. Met. Vol 300 400 500 600 700 800.

0.

2.

4.

6.

8.

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00.

01.

02.

03.

04.

05.

06.

07.

08.

09.

10.

11.

12.

32 0. 34 0. 36 0. 38 0. 40.

28.

29.

30.

31.

32.

33 increasing bias CIE Y CIE X 7V 10V 13V Intensity (a.U. ) Wavelength (nm) Fig. 2. Normalized EL spectra of the devices having different DPVBi thickness at 13V Fig. 3. EL spectra of device c at 7, 10, 13V, the inset is the CIE coordinates of device (c) from 4 to 16V Fig. 4 Current density-voltage and brightness-voltage characteristics of the device (C), the inset is the power efficiency -voltage characteristics of device (C) 2 4 6 8 10 12 14 16 0 2000 4000 6000 8000 10000 0 200 400 600 800 1000 1200 2 4 6 8 10121416 -0. 5.

0.

5.

[1] 0.

[1] 5.

[2] 0 Brightness (cd/m 2 ) Voltage (V) Current density (mA/cm 2 ) power efficiency(lmw -1 ) Voltage (V)91 (1997) p.3.

[6] C. Hosokawa, H. Higashi, H. Nakamura and T. Kusumoto: Appl. Phys. Lett. Vol 67 (1995) p.3853.

[7] C.W. Tang, S.A. Vanslyke and C.H. Chen: J. Appl. Phys. Vol 65 (1989) p.3610.

[8] R.S. Deshpande, Bulvic'V and S.R. Forrest: Appl. Phys. Lett. Vol 75 (1999) p.888.

[9] T. Mori, K. Miyachi and Mizutani: J. Phys. D: Appl. Phys. Vol 28 (1995) p.1461.