Polarized Photoluminescence and Temperature-Dependent Photoluminescence Study of InAs Quantum Wires on InP (001)

W. Lei; Y.H. Chen; Y.L. Wang; X.L. Ye; P. Jin; Bo Xu; Yi Ping Zeng; Z.G. Wang

doi:10.4028/www.scientific.net/MSF.475-479.1897

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HomeMaterials Science ForumMaterials Science Forum Vols. 475-479Polarized Photoluminescence and...

Polarized Photoluminescence and Temperature-Dependent Photoluminescence Study of InAs Quantum Wires on InP (001)

Abstract:

InAs quantum wires (QWRs) have been fabricated on the InP(001), which has been evidenced by TEM and polarized photoluminescence measurements (PPL). The monlayer-splitting peaks (MSPs) in the PL spectrum of InAs QWRs can be clearly observed at low temperature measurements. Supposing a peak-shift of MSP identical to that of bulk material, we obtain the thermal activation energies of up to 5 MSPs. The smaller thermal activation energies for the MSPs of higher energy lead to the fast red-shift of PL peak as a whole.

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Materials Science Forum (Volumes 475-479)

Pages:

1897-1900

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.475-479.1897

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Online since:

January 2005

Authors:

W. Lei, Y.H. Chen, Y.L. Wang, X.L. Ye, P. Jin, Bo Xu, Yi Ping Zeng, Z.G. Wang

Keywords:

InAs Quantum Wires, InP, Polarized Photoluminescence, Temperature-Dependent Photoluminescence

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