Polarized Photoluminescence and Temperature-Dependent Photoluminescence Study of InAs Quantum Wires on InP (001)

Abstract:

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InAs quantum wires (QWRs) have been fabricated on the InP(001), which has been evidenced by TEM and polarized photoluminescence measurements (PPL). The monlayer-splitting peaks (MSPs) in the PL spectrum of InAs QWRs can be clearly observed at low temperature measurements. Supposing a peak-shift of MSP identical to that of bulk material, we obtain the thermal activation energies of up to 5 MSPs. The smaller thermal activation energies for the MSPs of higher energy lead to the fast red-shift of PL peak as a whole.

Info:

Periodical:

Materials Science Forum (Volumes 475-479)

Main Theme:

Edited by:

Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie

Pages:

1897-1900

DOI:

10.4028/www.scientific.net/MSF.475-479.1897

Citation:

W. Lei et al., "Polarized Photoluminescence and Temperature-Dependent Photoluminescence Study of InAs Quantum Wires on InP (001)", Materials Science Forum, Vols. 475-479, pp. 1897-1900, 2005

Online since:

January 2005

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$35.00

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