Effect of Pressure on Melting Temperature of Silicon and Germanium
The pressure-dependent melting temperature of bulk Si, bulk Ge and nanocrystalline (nc) Si are predicted by the Clapeyron equation where the pressure-dependent volume difference is modeled by introducing the effect of surface stress induced pressure. The predictions are found to be consistent with the present experimental and other theoretical results.
Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie
C.C. Yang and Q. Jiang, "Effect of Pressure on Melting Temperature of Silicon and Germanium", Materials Science Forum, Vols. 475-479, pp. 1893-1896, 2005