Effect of Pressure on Melting Temperature of Silicon and Germanium

Abstract:

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The pressure-dependent melting temperature of bulk Si, bulk Ge and nanocrystalline (nc) Si are predicted by the Clapeyron equation where the pressure-dependent volume difference is modeled by introducing the effect of surface stress induced pressure. The predictions are found to be consistent with the present experimental and other theoretical results.

Info:

Periodical:

Materials Science Forum (Volumes 475-479)

Main Theme:

Edited by:

Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie

Pages:

1893-1896

DOI:

10.4028/www.scientific.net/MSF.475-479.1893

Citation:

C.C. Yang and Q. Jiang, "Effect of Pressure on Melting Temperature of Silicon and Germanium", Materials Science Forum, Vols. 475-479, pp. 1893-1896, 2005

Online since:

January 2005

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$35.00

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