Effect of Pressure on Melting Temperature of Silicon and Germanium

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Abstract:

The pressure-dependent melting temperature of bulk Si, bulk Ge and nanocrystalline (nc) Si are predicted by the Clapeyron equation where the pressure-dependent volume difference is modeled by introducing the effect of surface stress induced pressure. The predictions are found to be consistent with the present experimental and other theoretical results.

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Materials Science Forum (Volumes 475-479)

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1893-1896

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January 2005

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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