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Efficient organic electroluminescence (EL) was first reported in 1987 by the researchers at Kodak[3].
We have reported the pyridine-containing compounds as electron-transporting materials for organic EL materials[13-15].
The configuration of ITO/α-NPD(50nm)/ (Alq)(30nm) /Compounds(1)-(6)(30 nm)/ LiF(0.5 nm)/Al(100 nm).
This suggests that electrons are injected from the Al cathode to the TMCD layer and then to the Alq emitter layer.
Vol. 15(2004), p.302 [16]Li YJ, Sasabe H, Su SJ, et al.

The electroluminescent (EL) spectra and CIE coordination of these devices were measured by the PR655 spectra scan spectrometer.
The molecular structure of the used organic material Results and Discussion The normalized EL spectra of four devices at 10 v is shown in Fig.2.
The normalized EL spectra is almost same and not variable at different voltage,therefore DPIHQZn has relatively color purity.
L–V characteristics of four devices Conclusions We have demonstrated a novel yellow emitting material DPIHZn using electroluminescence (EL) spectroscopy with the structure of ITO/ 2T-NATA(40 nm)/ NPB(10nm)/Alq:x﹪DPIHQZn(35nm) /Alq(35nm)/LiF(5nm)/Al ,(x=1,2,3,5)which indicates that the maximum luminance up to 3180cd/m2 at an applied voltage of 15V by adjusting the doping density of DPIHQZn.
Umar, Thin Solid Films 517, 4679,(2009) [5] Kido J ,Ohtaki C, Hongawa K, et al .

Fig.2 Normalized EL spectra of device ITO/TPD/Bphen/Rubrene/Bphen/LiF/Al at various voltages.
However, the ratio of 402nm peak intensity to 480nm peak intensity increases as the bias voltage increases, which can also be observed in EL spectra for the device ITO/TPD/Bphen/Rubrene/Bphen/LiF/Al.
Obviously the new peak at 480nm in EL spectra of device ITO/TPD/Bphen/LiF/Al can only be explained by the exciplex emission at TPD/Bphen interface.
Fig. 4 Normalized EL spectra of device ITO/TPD/Bphen/LiF/Al at various driving voltages.
Shi et al.: Appl.

Dual-EL Model of Dual-load NPC VSR A.
Dual-EL model According to Kirchhoff's circuit theory in Fig.1 and Park transformation, an EL model is achieved
[2] Majid Mehrasa, Saeed Lesan, Arash Abedi,et al.
[3] Majid Mehrasa, Saeed Lesan, Arash Abedi,et al.
Al-Haddad and F.

EL efficiency shows weak dependence on doping concentration and current density.
Furthermore, researchers from Cheng et al. have also synthesized and characterized a series of iridium(III) complexes with substituted 2-phenyldenzothiozoles as the cyclometalated ligands and showed that the electroluminescent (EL) efficiency and emissive colors of OLEDs based on these iridium (III) complexes could be finely tuned by suitable modification of the substituents on ligands[8].
LiF/Al were used as the electron transporting layer and the cathode, respectively.
Inset: current density- brightness-voltage curves of the optimized device EL Properties.
More importantly, EL efficiency shows weak dependence on doping concentration and current density.

Lee et al. [6] and Al-Assaf and El Kadi [7] used ANN to predict the fatigue life of the same composite material used in the training process of the ANN under different loading conditions.
In a later work, El Kadi and Al-Assaf [8] used different neural networks architectures to predict fatigue life.
In a more recent study, El Kadi et al. [12] used PC to predict the fatigue life in other composite materials not used in training.
El Kadi and Y.
El Kadi, I.M.

A detailed description of the LED preparation has been given by Oehme et al. [7].
For more details see Oehme et al. [7] and Schwartz et al. [9].
It is assumed that GeSn and Ge form a type-I MQW structure as described by Chen et al. [13].
El Kurdi, P.
El Kurdi, P.

With this consideration, new limit loads Fmax,el and deflections vmax,el were calculated for all beams
· This analysis assumes that the difference between Ft,el and Fmax,el is a result of welding stresses.
The analysis also assumes that Fmax,el should be close to the experimental limit load Fexp,el for unannealed beams.
Al Ali: The influence of welding process on the centrically compressed steel members when strengthening under load.
Al Ali.

Cathodoluminescence and electroluminescence of semiconductor structures in SEM Mariusz Pluska1, a, Andrzej Czerwinski1,b, Jacek Ratajczak1,c Anna Szerling1,d and Jerzy Kątcki3,e 1Institute of Electron Technology, Al.
Therefore, also EL measurements of the test structure were performed.
EL CL e-beam V1 = V2 Fig. 3.
CL and EL spectra registered at metallized part of mesa.
The exemplary CL and EL spectra for the mesa voltage of 926 mV are shown in Fig. 3.

A study of the photoluminescence (PL) of doped TPP in poly[2-methoxy-5- (2'-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV) has been conducted by Morgado et al[11].
The device structure used in this investigation was ITO/PEDOT:PSS(20 nm)/1%TTP:MEH-PPV(80 nm)/Al(100 nm).
The corresponding EL spectra were recorded and shown in Figure 3.
However, the EL properties were quite different.
It hints that the process of PL and EL follow different procedure.