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Online since: June 2014
Authors: Q.Z. Mehdi, Gurumurthy Hegde, Mohamad Ashry Bin Juusoh, Jinan B. Al-Dabbagh, Naser Mahmoud Ahmed
Al-Dabbagh 1, Naser Mahmoud Ahmed2
1 Faculty of Industrial Sciences and Technology, University Malaysia Pahang, Kuantan, 26300, Malaysia
2 School of Physics / University Sains Malaysia/ Penang/11800 / Malaysia
1aAuthor for Correspondence: murthyhegde@gmail.com
Keywords: ITO Argon gas flow, transparent films, resistance.
[2] RA Alla, G Hegde, L Komitov, Applied Physics Letters 102 (23) (2013) 233505; M Qasim, JB Al-Dabbagh, AN Abdalla, MM Yusoff, G Hegde, Nano Hybrids 4 (2013) 21-31
El-Nahass, Materials Science and Engineering B 177 (2012) 145– 150
[2] RA Alla, G Hegde, L Komitov, Applied Physics Letters 102 (23) (2013) 233505; M Qasim, JB Al-Dabbagh, AN Abdalla, MM Yusoff, G Hegde, Nano Hybrids 4 (2013) 21-31
El-Nahass, Materials Science and Engineering B 177 (2012) 145– 150
Online since: February 2008
Authors: César A.C. Sequeira, Diogo M.F. Santos, Yun Chen
It seems that the treatment of the alloy powder eliminated the oxide layer on the alloy surface
[12,13], increased its specific surface area, and formed a nickel-rich layer with high electrocatalytic
activity because of preferential dissolution of Mn and Al [9].
Anyeung: Energy Laboratory Report MIT EL 00-003 (Massachusetts Institute of Technology, Cambridge, MA 2000)
Anyeung: Energy Laboratory Report MIT EL 00-003 (Massachusetts Institute of Technology, Cambridge, MA 2000)
Online since: December 2015
Authors: Chaloempol Saributr, Adirek Rangkasikorn, Annop Chanhom, Jiti Nukeaw, Navaphun Kayunkid
Moreover, the electrical properties of ITO/indium-doped-pentacene/Al devices i.e. charge mobility and carrier concentration were determined by considering the relationship between current-voltage and capacitance-voltage.
Electrical properties e.g. charge carrier concentration and mobility were measured by analyzing current-voltage and capacitance-voltage of ITO/indium-doped pentacene/Al devices.
Current-voltage (I-V) characteristics of ITO/In-doped pentacene/Al devices with different doping concentration are shown in Fig. 2(c) while electrical properties e.g. carrier mobility and carrier concentration are listed in Table 1.
El Helou, G.
Electrical properties e.g. charge carrier concentration and mobility were measured by analyzing current-voltage and capacitance-voltage of ITO/indium-doped pentacene/Al devices.
Current-voltage (I-V) characteristics of ITO/In-doped pentacene/Al devices with different doping concentration are shown in Fig. 2(c) while electrical properties e.g. carrier mobility and carrier concentration are listed in Table 1.
El Helou, G.
Online since: February 2026
Authors: Hussein Ali Hussein Al Naffakh, Hamssah Hussein, Abbas Fadhil Mahdi, Furkan Rabee
Rabee, “The Genetic Algorithm Implementation in Smart Contract for the Blockchain Technology,” Al-Salam J.
Al-Shabi and A.
Al-Qarafi, “Improving blockchain security for the internet of things: challenges and solutions,” Int.
El Midaoui, E.
Nishi et al., “Electronic Healthcare Data Record Security Using Blockchain and Smart Contract,” J.
Al-Shabi and A.
Al-Qarafi, “Improving blockchain security for the internet of things: challenges and solutions,” Int.
El Midaoui, E.
Nishi et al., “Electronic Healthcare Data Record Security Using Blockchain and Smart Contract,” J.
Online since: May 2012
Authors: Zhao Hua Jiang, Dong Yun Ma, Wei Fang, Yu Guang Lv, Ying Wang, Yun Jie Zhang, Huan Yuan, Hong Liu, Yong Chang Zhu
The complex exhibited ligand-sensitized red emission, and it has higher sensitized luminescent efficiency and good thermal stability.In device ITO/PVK/ Eu(TTA)3(TPPO)2/Al, Eu3+ may be excited by intramolecular energy transfer from ligand as observed by electroluminescence.
Referenced research of Jin Tianzhu et al[7], IR studies prove formation of chelate hexatomic rings among europium and two ligand oxygen atoms ,which agrees with crystal structure tests in 2.1.1.
Fig.5 Fluorescence emission spectra Fig.6 EL spectra of the complex Eu (TTA)3(TPPO)2 of the complex (λex=376nm) at various driving voltages (12, 14 V) Electroluminescence The electroluminenscent device of the complex ITO/PVK: Eu (TTA)3(TPPO)2/PBD/Al with PVK / Eu (TTA) 3(TPPO)2 as emitting layer was fabricated with PVK and Eu (TTA)3(TPPO)2 mass ratio of 2:1.First Eu (TTA)3(TPPO)2 and poly N-vinylcar-bazole (PVK) were dissolved in chloroform with a concentration of 5mg/ml and 10 mg/ml respectively,then spin-coated on glass substrate at a speed of 1000r/min , finally electron transport thin layer 2- (4 - United phenyl) -5 - phenyl-oxadiazole(PBD) and aluminum were coated by thermal evaporation under high vacuum of 2 × 10−6 T.The electroluminescent spectra of the complex at driving voltage of 12V and 14V is shown in Fig. 6 respectively.Two characteristic peaks at 592 nm and 614 nm appear without PVK emission at 410 nm at both low driving voltages.This disappearence
Referenced research of Jin Tianzhu et al[7], IR studies prove formation of chelate hexatomic rings among europium and two ligand oxygen atoms ,which agrees with crystal structure tests in 2.1.1.
Fig.5 Fluorescence emission spectra Fig.6 EL spectra of the complex Eu (TTA)3(TPPO)2 of the complex (λex=376nm) at various driving voltages (12, 14 V) Electroluminescence The electroluminenscent device of the complex ITO/PVK: Eu (TTA)3(TPPO)2/PBD/Al with PVK / Eu (TTA) 3(TPPO)2 as emitting layer was fabricated with PVK and Eu (TTA)3(TPPO)2 mass ratio of 2:1.First Eu (TTA)3(TPPO)2 and poly N-vinylcar-bazole (PVK) were dissolved in chloroform with a concentration of 5mg/ml and 10 mg/ml respectively,then spin-coated on glass substrate at a speed of 1000r/min , finally electron transport thin layer 2- (4 - United phenyl) -5 - phenyl-oxadiazole(PBD) and aluminum were coated by thermal evaporation under high vacuum of 2 × 10−6 T.The electroluminescent spectra of the complex at driving voltage of 12V and 14V is shown in Fig. 6 respectively.Two characteristic peaks at 592 nm and 614 nm appear without PVK emission at 410 nm at both low driving voltages.This disappearence
Online since: December 2016
Authors: B.V. Rajendra, H.S. Sindhu, Sumanth Joishy, P.D. Babu
Paramagnetic effects in a un doped ZnO were also observed by Xu et al [5] which they claimed to cause ferromagnetism.
Debbichi et al [7] observed the origin of magnetism, by considering the super-cell with a defect by removing a neutral atom.
It seems like particles of ZnO were assembled to form a fibrous structure, Similar feature was also reported by Islam and Podder et al [16] whereas Tarwal et al [17] observed the compact surface which was made up of various tiny spherical grains for ZnO films deposited at 723K for 0.1M concentration.
For Sarica et al [14] reported that ZnO films exhibits ferromagnetic behavior for higher precursor concentration of 0.1M.
El Marssi, M.
Debbichi et al [7] observed the origin of magnetism, by considering the super-cell with a defect by removing a neutral atom.
It seems like particles of ZnO were assembled to form a fibrous structure, Similar feature was also reported by Islam and Podder et al [16] whereas Tarwal et al [17] observed the compact surface which was made up of various tiny spherical grains for ZnO films deposited at 723K for 0.1M concentration.
For Sarica et al [14] reported that ZnO films exhibits ferromagnetic behavior for higher precursor concentration of 0.1M.
El Marssi, M.