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Box 11-8281, Riad El Solh 1107 2260 Beirut, Lebanon b Laboratoire des Multimateriaux et Interfaces, UMR-CNRS 5615, Université Claude Bernard Lyon1, 43 Bd du 11 nov. 1918, 69622 Villeurbanne, France c Chemistry Department, Faculty of Science, Beirut Arab University, P.O.
The thickness of the Al-doped SiC layer was measured to be ~1µm.
Knowing the layer thickness (1 µm), the Al concentration was determined to be 3.9x1020 at/cm3.
The LOD of Al in this case is equal to 6x1018 at/cm3.
El-Ashry, M.

Alaa Physics Department, Faculty of Science, El-Minia University, 61519 El-Minia, Egypt, email: hamdyfm@link.net & esamhady@link.net Keywords: Positron annihilation, free volume hole, polyvinyl chloride, conductivity, dielectric Abstract.
This is in good agreement with the data of Shekar et al. [5] for polyvinyl alcohol.
Abdel-Malik and his group (Physics Department, Faculty of Science, El-Minia University, Egypt) for their help in dielectric measurements.
El-Hanafy, and M.
El-Nimr, J.

El-Nahass, K.F.
Abd-El-Rahman, A.A.M.
El-Nahass, H.M.
El-Nahass, K.F.
Abd-El-Rahman, “Investigation of electrical conductivity in Schottky-barrier based on nickel phthalocyanine thin fims”, J.

[2] Pan Wenxia, Fu Zhongxing, Wang Pengfei, el al.
Tanikawa, el al.
[4] Yan Gangui, Xie Guoqiang, Li Junhui, el al.
[7] Yang Shuili, Li Jianlin, Hui Dong, el al.
[8] Feng Jiangxia, Liang Jun, Zhang Feng, el al.

Introduction The Quality Index has been used over the past 30 years to rate the metallurgical quality of Al-Si-Mg aluminium casting alloys (such as grades A356 and 357) irrespective of their temper condition [1].
It was shown empirically that the metallurgical quality could be expressed by a numerical index Q (in MPa) given by Q = UTS + 150 log El, where UTS is the ultimate tensile strength in MPa and El the elongation at failure in %.
The yield strength YS was found to be tied to UTS and El by the relationship: YS = UTS – 60 log El - 13.
The use of Quality Index makes easy and reliable the adjustment of the temperature and temper time in the T6 heat treatment process; it allows to accurately answer the question: For a casting of given metallurgical quality, how much strength (YS, UTS) may be traded off for ductility (El) in order to meet the required tensile specifications.
HOUSINGS Location T F W YS, MPa 130 122 152 UTS, MPa 190 177 207 El., % 6.0 5.0 5.1 Q, MPa 307 282 312 Q Predicted 305 315 335 LPDC HOUSINGS Location T F W YS, MPa 202 217 185 UTS, MPa 260 266 257 El., % 6.4 6.4 6.5 Q, MPa 38 387 379 Q Predicted 368 375 390 Fig. 2 - Location and shape of excised tensile samples and test results (tables on the right) Secondary Dendrite Arm Spacing (DAS) and level of microporosity (por).

As well as the 452 metals abstracts, the issue includes – in line with the new editorial policy of including original papers on all of the major material groups: “Defect Investigation of Plastically Deformed Al 5454 Wrought Alloy Using PADBS and Electrical Measurements” (Abdel-Rahman, Kamel, Lotfy, Badawi and Abdel-Rahman), “Activation Enthalpy of Dislocation Migration in Aircraft (Aerospace) (2024) Alloy by Positron Spectroscopy” (Abdel-Rahman, Abdallah, Hassan and Badawi), “Effect of Irradiation Dose on AlCu6.5 Alloy using Positron Annihilation Doppler Broadening Technique” (Abdel-Rahman, Lotfy, Abdel-Rahman and Badawi), “Dependence of Mono-Vacancy Formation Energy on the Parameter of Ashcroft's Potential” (Ghorai), “X-Ray Characterization of Ag Impurities in Na1-xAgxCl” (Hazeen, Syed Ali, Prema Rani and Saravanan), “Self-Organization Behavior of Sub-Micron CdO Grains Grown during Vapour-Solid Transition” (Zhang, Wang and Li), “Studies of the Local Structure and the Spin Hamiltonian Parameters
“The Effect of Defect Disorder on the Electronic Structure of Rutile TiO2-x” (Hossain, Murch, Sheppard and Nowotny), “Grain-Boundary-Defects-Induced Switching in Zn-Bi-Mo Ceramic” (El-Hofy), “Synthesis and Characterization of ZrW2O7(OH1-x,Clx)2▪2H2O (x = 0.016, 0.025)” (Cao, Deng, Ma, Wang and Zhao), “Modelling of the Gettering by Mechanical Damage of Metallic Impurities in Silicon” (Ayad and Remram), “Deep Trap Concentrations from Three-Dimensional Carrier Concentration Profiles in Hydride Vapor Pressure Epitaxially-Grown GaN” (Halder, Martin and Sisler), “Slow Positron Studies of Defects in Si-Doped GaAs” (Godbole, Badera, Shrivastava and Joshi), “Six-Jump-Cycle Mechanism for Collective Correlations in Nonstoichiometric Intermetallic Compounds” (Gosain, Chaturvedi, Belova and Murch), “Vacancy-Wind Factors and Collective Correlation Factors in Nonstoichiometric B2 Intermetallic Compounds” (Gosain, Chaturvedi, Belova and Murch), “Defect Densities using the Positron Annihilation Doppler
Broadening Technique in Wrought Alloys 3003 and 3005” (Abdel-Rahman, Kamel, Abo-Elsoud, Lotfy and Badawi), “Phenomenological Model for Creep Behaviour in Cu-8.5at%Al Alloy” (Abo-Elsoud), “Surface Microstructural Evolution up to Creep Rupture under the Power-Law Regime in Cu-8.5at%Al Alloy at Intermediate Temperatures” (Abo-Elsoud), “Effect of γ-Irradiation on the Mechanical Properties of Al-Cu Alloy” (Abo-Elsoud and Ismail), “On the Physics of the Anomalous Characteristics of Fickian Diffusion of Fe and Other Transition-Element Impurities in Crystalline Al at Elevated Temperatures” (Nechaev), “On the Physics of Enhanced Fickian Diffusion and Structural-Phase Changes in Intensively Deforming Metallic Materials” (Nechaev).

During the experiment, two measured earthquake acceleration records of a far-field Northridge wave and a near-field El-Centro wave were selected.
The acceleration peak of the Northridge waves and El-Centro wave adjust to 1.97 m·s-2, respectively.
Fig.3 Maximum acceleration of each layer under Northridge wave Fig.4.Maximum displacement of each layer under Northridge wave Fig.5.Maximum acceleration of each layer under El-Centro wave Fig.6.Maximum displacement of each layer under El-Centro wave It can be seen from Fig.5 and Fig.6, under the effect of El-Centro wave, every layer’s maximum acceleration and maximum displacement of each layer of the steel frame with SMA cable have also reduced, the maximum acceleration of top-level was reduced by 43.8%, and the maximum displacement of bottom layer was reduced by 82%.
Y., et al, Smart Mater.
(in chinese) [8] Han Yulin, Li Aiqun, Lin Pinghua et al.

Si et al.: Int.
El-Hussiny and M.
El-Midany: J.
El-Guindy and W.G.
El-Hussiny and M.

Electroluminescence Imaging EL: When excited carriers recombine into a solar cell, it emits photons then accordingly EL imaging is obtained.
An EL effect happens then by means of an injected current that yields the excitation [9].
References [1] Jiang, L.L. et al.
Photoenergy, 2012. [12] Ancuta F. et al., “Fault analysis possibilities for PV panels“.
IEEE; 2016, p. 144–9. [17] Hu, Y. et al., 2013.

Sun et al
Note that El-Raghy et al [5] have not observed the phenomenon of the frictional layer in their tests.
El-Raghy: J.
El-Raghy, P.
El-Raghy and L.