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Siddharth et al. [11] synthesised Al alloy A7075 with 5% RHA by stir casting.
Shivaprakash et al. [12] developed a hybrid composite with Al alloy with Cu (4.5%) matrix having SiC and RHA as reinforcements by stir casting.
They tested mass ratios of RHA:Al(OH)3 of 70:30 to 99:1.
Hassan, Aluminium alloy - rice husk ash composites production and analysis, Leonardo El.
Waziri, A Comparative Study on the Properties of Al-7%Si-Rice Husk Ash and Al-7%Si-Bagasse Ash Composites Produced by Stir Casting, Int.

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Labonnote et al. [8] analysed, for the building construction sector, since 1990′s, the evolution of large scale additive manufacturing.
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In the previous study, Chaar et al. [7] and Patel et al. [8] indicated that Mg3(VO4)2 was a more selective catalyst in the ODH of butane due to the difficuity in reducing of oxygen atoms in the V-O-Mg bonds in Mg3(VO4)2 than the bridging oxygen in the V-O-V bonds in Mg2V2O7.
Chaar et al. [9] observed the similar selectivity for Mg3(VO4)2 and Mg2V2O7 in the ODH of propane, however, Sam et al. [10] suggested that Mg2V2O7 was the selective phase and Mg3(VO4)2 leaded to the complete oxidation because the ability of the corner-shared VO4 tetrahedra in V2O74- anion to stabilize V4+ associated with an oxygen vacancy.
Regarding the ODH of cyclohexane, Kung et al. [11] only carried out the reaction over 40(60)V-Mg-O catalyst and obtained a relatively better catalytic performance.
FT-IR patterns of the Mg-V-O catalysts Fig.2 showed the FT-IR characterization patterns of Mg-V-O catalysts, which is in accordance with the characterization results of Hanuza et al.[13], Sam et al.[14] and Gao et al.[15].
Spinace and E.L.

Hartz et al. disposed C2F6 by using microwave plasma under 2-43 Torr pressure [8].
Wofford et al. carried out the abatement experiment under 0.3-0.5 Torr low pressure conditions [9].
Shin et al. presented a kerosene microwave plasma method for abatement of SF6 and CF4 gases [13].
Tsai et al. investigated the abatement of SF6 and CF4 by atmospheric pressure microwave plasma [16, 17].
El-Bahy, R.

Later Fang el al. [3] reported from observation on thermal etched CCTO under SEM micrograph, the semiconductive grains are actually consisted of domains and domain boundaries which resulting two kind of insulating barrier layer.
Liu et al. [12] which also studied Nb doped CCTO suggested by adding Nb shift the relaxation toward higher frequency.
The same trend also reported by Liu et al. [12] and Hong et al. [13].
According to Brize et al. [14], larger grain formation leads to higher value of dielectric constant.
These observation is meet agreement as reported by Liu et al. [12].

Even for repair welding of Al alloys the literature has too little to offer [3].
Their structure consists from solid solution of Si into Al matrix (α – phase), and almost pure silicon, β – phase.
A similar approch has been done by Munoz, [4] and all, 2008, for an heat treatable Al-Mg-Sc alloy.
TIG Welding parameters Phases Is, [A] d MA, [mm] d el W, [mm] vs, [cm/min] q, [l/min] υ, [Hz] Root pass 100 2.4 2.4 8.3 8 160 Upper pass 80 2.4 2.4 9.6 8 160 where: Is – welding current; , dMA- filler metal diameter; vs – welding speed; q – gas flow; va – wire speed; υ – frequency.
Ma, A.L.