Nanoscale Investigation of Nb-Doped CaCu3Ti4O12 Grains

Muhammad Azwadi Sulaiman; Sabar Derita Hutagalung; Zainal Arifin Ahmad

doi:10.4028/www.scientific.net/AMR.364.455

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 364Nanoscale Investigation of Nb-Doped CaCu3Ti4O12...

Nanoscale Investigation of Nb-Doped CaCu₃Ti₄O₁₂ Grains

Abstract:

CaCu₃Ti₄O₁₂ (CCTO) is a promising material for microelectronic and microwave device applications due to its unique properties that posses high dielectric constant in the wide temperature range. In this work, atomic force microscopy (AFM) and scanning electron microscopy (SEM) analyses were applied for nanoscale imaging of Nb-doped CCTO grains. The Nb-doped CCTO pellets (CaCu₃Ti_4-xNb_xO_12+x/2; x = 0, 0.01, 0.03, 0.05, 0.1) were prepared via solid state reaction method and thermally etched at 940°C for an hour. From AFM and SEM images found that tiny bumped as well as terrace type domains are distributed within a grain. The domain size is ranging from 20 to 180 nm measured by AFM. The existence of domains on grain will produce grain boundary and domain boundary resistance inside CCTO. Both domain and grain resistance are believed to strongly influence the electrical properties of CCTO.

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Advanced Materials Research (Volume 364)

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455-459

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https://doi.org/10.4028/www.scientific.net/AMR.364.455

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October 2011

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Muhammad Azwadi Sulaiman, Sabar Derita Hutagalung, Zainal Arifin Ahmad

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