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The elasto-plastic constitutive equation of the 90-degree lamina was obtained using the extended Eshelby’s equivalent inclusion model proposed by Tohgo et al. [3] and the experimentally-obtained compressive stress-strain curve of the matrix resin.
Fig. 5 FEM model Table 1 Material properties of T700S/2592 CFRP Young's moduli EL 135 GPa ET, Ez 8.5 GPa Poisson's ratios nLT, nLz 0.34 nTz 0.49 Elastic shear moduli GLT, GLz 4.8 GPa GTz 2.7 GPa Tensile strength sLt 2550 MPa sTt 69 MPa Compressive strength sLc 2500 MPa sTc 200 MPa Shear strength tLT 100 MPa tTz 100 MPa Subscripts L, T, z denote the fiber axial, transverse and lateral directions, respectively.

Hou et al. [2] stated that structural damage or the change in system stiffness may be detected by spikes in the details of the wavelet decompositions of the response data.
The damping ratios for all modes are assumed to be 0.05 and El-Centro earthquake load is applied to the base of the structure.

[4] Mei Hongwei, Mao Yingke, Bian Xingming, el al.

Table 1 Chemical compositions of GH4033 (wt %) Composition C Cr Al Ti Ni Fe B Si Mass fraction 0.03~0.08 19~22 0.6~1.0 2.4~2.8 balance ≤ 4 ≤ 0.01 ≤ 0.35 Fabrication of micro-nanometer composite powders including 0.5, 1.0 and 1.5 wt% nano-SiCp respectively was carried out using the method been described in Chinese patent [6], a previous study of the authors.
[4] E.L.

Šukšta 3, d 1 Welding and Material Science Institute, Vilnius Gediminas Technical University, Basanavičiaus 28, Vilnius, LT-03224, Lithuania 2 High Magnetic Field Laboratory, Faculty of Electronics, Vilnius Gediminas Technical University, Naugarduko 41, Vilnius, LT-03227, Lithuania 3 Laboratory of Materials Strength, Vilnius Gediminas Technical University, Saul÷tekio al. 11, Vilnius, LT-10223, Lithuania a nikvis@me.vtu.lt, bjurij.novickij@el.vtu.lt, cdanutes@me.vtu.lt, d marsu@fm.vtu.lt Keywords: Cu-Nb microcomposite, tensile strength, elongation at failure, ductility, cyclic overloads Abstract.

[6] Yousuf M S, Rizvi S Z, El-Shafei M, Power line communications: An overview-Part II[C]//Information and Communication Technologies: From Theory to Applications, 2008.
[7] Gungor V C, Sahin D, Kocak T, et al.

Rachofsky et al. [9] reported the DNA base stacking was one reason for the fluorescence quenching.
[9] E.L.

[8] A Rjeb, L Tajounte, M Chafik El Idrissi, S Letarte, A Adnot, D Roy, et al.

[4]Liu Bingkang, Zhang Yuzhong, JIN Zhefeng, et al,(2005).
[6]Li Zhenbao, Dong ingfeng, Yan Weiming, el at(2006).

Finally, MOS capacitor structure was fabricated, when evaporating Ni for the backside ohmic contact and sputtering Al (200 nm) on the oxide surface to form the gate electrode.
El, Basic mechanisms of threshold-voltage instability and implications for reliability testing of SiC MOSFETs, IEEE Trans.