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Online since: August 2009
Authors: T. Miranda G-Cuevas, I. Montero Puertas, J.I. Arranz Barriga, M. López León, S. Rojas Rodríguez
González et al.: Prácticas de Laboratorio (Ed.
Technical Report: Inventario de recursos forestales, modos de intervención y alternativas de aprovechamiento en el Robledal de la Solana y su entorno (2008).
Technical Report: Inventario de recursos forestales, modos de intervención y alternativas de aprovechamiento en el Robledal de la Solana y su entorno (2008).
Online since: September 2014
Authors: Yu Feng Li, Hua Mei Guo, Qian Wu
El-Taweel and A.G.
Elagumeg, et al.: Liebigs Ann.
Elagumeg, et al.: Liebigs Ann.
Online since: October 2010
Authors: Yan Hong Zhao, Min Sun, Shu Wei Wang, Wen Ming Tong, Xiao Jing Wang
El-Sharkawy, A.Y.
Al-Amer: J Coll Inter Sci 310 (2007), p. 498
Al-Amer: J Coll Inter Sci 310 (2007), p. 498
Online since: March 2011
Authors: Gabriel Ferro, Efstathios K. Polychroniadis, Davy Carole, Maya Marinova, Jean Lorenzzi, Olivier Kim-Hak, Nikoletta Jegenyes, Maher Soueidan
Box 11-8281, Riad El Solh 1107 2260 Beirut, Lebanon
agabriel.ferro@univ-lyon1.fr , bolivier.kim-hak@univ-lyon1.fr, cjean.lorenzzi@univ-lyon1.fr, dnikoletta.jegenyes@univ-lyon1.fr, emarinova@physics.auth.gr, fmsoueidan@cnrs.edu.lb gdavy.carole@univ-lyon1.fr, hpolychr@auth.gr
Keywords: 3C-SiC(111), Twin boundary, defect elimination, CVD, VLS
Abstract.
Neudeck et al. showed that this defect can be avoided during CVD growth by using the step-free mesa approach [1].
Neudeck et al. showed that this defect can be avoided during CVD growth by using the step-free mesa approach [1].
Online since: April 2014
Authors: K. Guerin, M. Dubois, A. Pauly, C. Varenne, J. Brunet, A. Ndiaye
El Mir, B.
Abdullah, A.L.
Abdullah, A.L.
Online since: October 2013
Authors: Wei Zong, Yu Shan Zhang
[2] Decrossas,E, El Sabbagh, in: Carbon nanotubes for electromagnetic compatibility applications, dtied by IEEE International Symposium on ElectromagneticCompatibility (2012)
[4] Zhao Zhihua, Zhang Xiangming, Li Jianxuan, et al, dtied by Transactions of China Electrotechnical Society(2010).
[4] Zhao Zhihua, Zhang Xiangming, Li Jianxuan, et al, dtied by Transactions of China Electrotechnical Society(2010).
Improvement of Performance of Electroluminescent Panel by Reducing the Thickness of Dielectric Layer
Online since: May 2019
Authors: Michal Hrabal, Petr Dzik, Michal Kalina, Pavel Florián, Lukáš Omasta, Martin Vala, Martin Weiter
An extensive review of all the types of EL approaches with their advantages and disadvantages was given by for instance by Chadha in Powder Electroluminescence [5] and by Bredol and Dieckhoff [6].
Wang et al., Enhancing light emission in flexible AC electroluminescent devices by tetrapod-like zinc oxide whiskers, Optics Express. 24 (2016). 23419 – 23428
Wang et al., Enhancing light emission in flexible AC electroluminescent devices by tetrapod-like zinc oxide whiskers, Optics Express. 24 (2016). 23419 – 23428
Online since: May 2015
Authors: Sumio Hosaka, Zulfakri bin Mohamad, You Yin, Ryosuke Takahashi, Tao Jin, Hui Zhang, Miftakhul Huda, Vu Le Mine Nhat
., Gunma University, 1-5-1 Tenjin-cho, Kiryu 376-8515, Japan
2Human Resource Cultivation Center, Gunma University, 1-5-1 Tenjin-cho, Kiryu 376-8515, Japan
at13801457@gunma-u.ac.jp, bk.billow@gmail.com, czulfakri@salam.uitm.edu.my, dvera1015@163.com, estunecity@gmail.com, ft10303032@gunma-u.ac.jp, gyinyou@gunma-u.ac.jp, hhosaka@el.gunma-u.ac.jp
Keywords: Atomic force microscope, Polarization, Magnetization, Scanning near-field polarization Microscope, Scanning probe microscope, Magnetic nanodot array.
Hosaka et al. measured the magnetic property of the magnetic nanodot arrays by XMCD with Pt-L3 edge energy of 11.56 keV in synchrotron radiation [3].
Hosaka et al. measured the magnetic property of the magnetic nanodot arrays by XMCD with Pt-L3 edge energy of 11.56 keV in synchrotron radiation [3].
Online since: May 2023
Authors: Patrick Fiorenza, Fabrizio Roccaforte, Filippo Giannazzo, Mario Saggio, Laura Scalia, Edoardo Zanetti, Marco Camalleri
Experimental
In this paper, different n-channel lateral MOSFETs were fabricated on 4◦-off-axis n-type (0001) 4H- SiC epitaxial layers (1 × 1016 cm-3) an aluminum (Al) implanted body region (NA ~ 1017cm-3).
El, IEEE Trans.
El, IEEE Trans.
Online since: April 2009
Authors: L.A. Koroleva, N.A. Kalanda, B.M. Trukhan, L.I. Gurskii, T.M. Khapaeva, D.M. Zashchirinskii
Introduction
It is known that in Re1-xAxMnO3-y (Re is rear earth ion and A are Sr, Ca, Ba et al)
manganites the y-value is only positive, as at y < 0 the crystalline structure of a perovskite is nonstable
[1].
Let.A Vol. 139-144 (2002), p. 139 [6] E.L.
Let.A Vol. 139-144 (2002), p. 139 [6] E.L.