On the Mechanism of Twin Boundary Elimination in 3C-SiC(111) Heteroepitaxial Layers on α-SiC Substrates

Gabriel Ferro; Olivier Kim-Hak; Jean Lorenzzi; Nikoletta Jegenyes; Maya Marinova; Maher Soueidan; Davy Carole; Efstathios K. Polychroniadis

doi:10.4028/www.scientific.net/MSF.679-680.71

Paper Titles

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Chloride-Based CVD at High Rates of 4H-SiC on On-Axis Si-Face Substrates
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Effects of Nitrogen Doping on Basal Plane Dislocation Reduction in 8° Off-Cut 4H-SiC Epilayers
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Reduction of the Surface Density of Single Shockley Faults by TCS Growth Process
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On the Mechanism of Twin Boundary Elimination in 3C-SiC(111) Heteroepitaxial Layers on α-SiC Substrates
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Chloride Based CVD of 3C-SiC on (0001) α-SiC Substrates
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Analytical Model of Stress Relaxation in 3C SiC Layers on Silicon
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Structural Investigations of a Sputtered Intermediate Carbonization Layer for 3C-SiC on (111) and (110) Si Substrates
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Atomistic Simulation of SiC Growth at the SiC(0001)/Si_1-XC_x Interface by the Monte Carlo Method
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HomeMaterials Science ForumMaterials Science Forum Vols. 679-680On the Mechanism of Twin Boundary Elimination in...

On the Mechanism of Twin Boundary Elimination in 3C-SiC(111) Heteroepitaxial Layers on α-SiC Substrates

Abstract:

This paper deals with the formation and propagation of twin boundaries (TBs) inside 3C-SiC layers grown heteroepitaxially on -SiC substrate. The equivalent probability of nucleating 60° rotated 3C islands on such substrate lead to the systematic formation of TB upon coalescence of these islands. Elimination of these defects should occur by bending of the propagation direction. Bending through incoherent TBs is usually encountered during both VLS and CVD growth and it generates crystalline defects due to high built-in energy. One would prefer coherent TBs, formed by two-by-two annihilation of neighbouring TBs, which do not form new defect except microtwin inclusion at the interface. Such TB annihilation seems to be a specificity of growth by VLS mechanism. The mechanism of such bending is discussed

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Materials Science Forum (Volumes 679-680)

Pages:

71-74

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.71

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Online since:

March 2011

Authors:

Gabriel Ferro, Olivier Kim-Hak, Jean Lorenzzi, Nikoletta Jegenyes, Maya Marinova, Maher Soueidan, Davy Carole, Efstathios K. Polychroniadis

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3C-SiC(111), CVD, Defect Elimination, Twin Boundary, VLS

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References

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