Chloride Based CVD of 3C-SiC on (0001) α-SiC Substrates

Anne Henry; Stefano Leone; Franziska Christine Beyer; Sven Andersson; Olof Kordina; Erik Janzén

doi:10.4028/www.scientific.net/MSF.679-680.75

Paper Titles

Chloride-Based CVD at High Rates of 4H-SiC on On-Axis Si-Face Substrates
p.59

Effects of Nitrogen Doping on Basal Plane Dislocation Reduction in 8° Off-Cut 4H-SiC Epilayers
p.63

Reduction of the Surface Density of Single Shockley Faults by TCS Growth Process
p.67

On the Mechanism of Twin Boundary Elimination in 3C-SiC(111) Heteroepitaxial Layers on α-SiC Substrates
p.71

Chloride Based CVD of 3C-SiC on (0001) α-SiC Substrates
p.75

Analytical Model of Stress Relaxation in 3C SiC Layers on Silicon
p.79

Structural Investigations of a Sputtered Intermediate Carbonization Layer for 3C-SiC on (111) and (110) Si Substrates
p.83

Atomistic Simulation of SiC Growth at the SiC(0001)/Si_1-XC_x Interface by the Monte Carlo Method
p.87

Polarity Control of CVD Grown 3C-SiC on Si(111)
p.91

HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Chloride Based CVD of 3C-SiC on (0001) α-SiC...

Chloride Based CVD of 3C-SiC on (0001) α-SiC Substrates

Abstract:

A chloride-based chemical-vapor-deposition (CVD) process has been successfully used to grow very high quality 3C-SiC epitaxial layers on on-axis α-SiC substrates. An accurate process parameters study was performed testing the effect of temperature, in situ surface preparation, precursor ratios, nitrogen addition, and substrate polytype and polarity. The 3C layers deposited showed to be largely single-domain material of very high purity and of excellent electrical characteristics. A growth rate of up to 10 µm/h and a low background doping enable deposition of epitaxial layers suitable for MOSFET devices.

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Materials Science Forum (Volumes 679-680)

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75-78

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https://doi.org/10.4028/www.scientific.net/MSF.679-680.75

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Online since:

March 2011

Authors:

Anne Henry, Stefano Leone, Franziska Christine Beyer, Sven Andersson, Olof Kordina, Erik Janzén

Keywords:

3C-SiC, Chloride-Based CVD, Epitaxial Growth, On-Axis

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