Chloride Based CVD of 3C-SiC on (0001) α-SiC Substrates

Abstract:

Article Preview

A chloride-based chemical-vapor-deposition (CVD) process has been successfully used to grow very high quality 3C-SiC epitaxial layers on on-axis α-SiC substrates. An accurate process parameters study was performed testing the effect of temperature, in situ surface preparation, precursor ratios, nitrogen addition, and substrate polytype and polarity. The 3C layers deposited showed to be largely single-domain material of very high purity and of excellent electrical characteristics. A growth rate of up to 10 µm/h and a low background doping enable deposition of epitaxial layers suitable for MOSFET devices.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

75-78

DOI:

10.4028/www.scientific.net/MSF.679-680.75

Citation:

A. Henry et al., "Chloride Based CVD of 3C-SiC on (0001) α-SiC Substrates", Materials Science Forum, Vols. 679-680, pp. 75-78, 2011

Online since:

March 2011

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.