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HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Polarity Control of CVD Grown 3C-SiC on Si(111)

Polarity Control of CVD Grown 3C-SiC on Si(111)

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Abstract:

XPD and XRD measurements revealed a difference in the crystallographic polarity of 3C-SiC(111) grown on Si(111) carbonized by ethene diluted in hydrogen at atmospheric pressure in a rapid thermal chemical vapour deposition reactor and the crystallographic polarity of 3C-SiC(111) formed in an ethene hydrogen gas mixture at low pressures. In the first case C-face polar material was formed, whereas in the second case the grown expitaxial layer exhibits Si-face surface polarity.

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Silicon Carbide and Related Materials 2010

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Periodical:

Materials Science Forum (Volumes 679-680)

Pages:

91-94

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.91

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Online since:

March 2011

Authors:

Joerg Pezoldt, Bernd Schröter

Keywords:

3C-SiC, Crystallographic Polarity, Epitaxy, Photoelectron Diffraction, RHEED, X-Ray Diffraction (XRD)

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© 2011 Trans Tech Publications Ltd. All Rights Reserved

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