Polarity Control of CVD Grown 3C-SiC on Si(111)
XPD and XRD measurements revealed a difference in the crystallographic polarity of 3C-SiC(111) grown on Si(111) carbonized by ethene diluted in hydrogen at atmospheric pressure in a rapid thermal chemical vapour deposition reactor and the crystallographic polarity of 3C-SiC(111) formed in an ethene hydrogen gas mixture at low pressures. In the first case C-face polar material was formed, whereas in the second case the grown expitaxial layer exhibits Si-face surface polarity.
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
J. Pezoldt and B. Schröter, "Polarity Control of CVD Grown 3C-SiC on Si(111)", Materials Science Forum, Vols. 679-680, pp. 91-94, 2011