Polarity Control of CVD Grown 3C-SiC on Si(111)

Abstract:

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XPD and XRD measurements revealed a difference in the crystallographic polarity of 3C-SiC(111) grown on Si(111) carbonized by ethene diluted in hydrogen at atmospheric pressure in a rapid thermal chemical vapour deposition reactor and the crystallographic polarity of 3C-SiC(111) formed in an ethene hydrogen gas mixture at low pressures. In the first case C-face polar material was formed, whereas in the second case the grown expitaxial layer exhibits Si-face surface polarity.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

91-94

DOI:

10.4028/www.scientific.net/MSF.679-680.91

Citation:

J. Pezoldt and B. Schröter, "Polarity Control of CVD Grown 3C-SiC on Si(111)", Materials Science Forum, Vols. 679-680, pp. 91-94, 2011

Online since:

March 2011

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$35.00

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