Epitaxial Growth of 3C-SiC on Si Substrates by Atmospheric Hot Wall CVD Using Hexamethyledisilane[(CH3)6Si2]

Tae Woo Lee; Im Gyu Yeo; Byoung Chul Shin; Won Jae Lee; Mi Seon Park; Hyun Hee Hwang; Shigehiro Nishino

doi:10.4028/www.scientific.net/MSF.679-680.107

Paper Titles

Polarity Control of CVD Grown 3C-SiC on Si(111)
p.91

Epitaxial Growth on 4H-SiC on-Axis, 0.5°, 1.25°, 2°, 4°, 8° Off-Axis Substrates – Defects Analysis and Reduction
p.95

Investigation of the Growth of 3C-SiC on Si by Vapor-Liquid-Solid ( VLS ) Transport
p.99

Geometrical Control of 3C and 6H-SiC Nucleation on Low Off-Axis Substrates
p.103

Epitaxial Growth of 3C-SiC on Si Substrates by Atmospheric Hot Wall CVD Using Hexamethyledisilane[(CH₃)₆Si₂]
p.107

Investigation of 3C-SiC Lateral Growth on 4H-SiC Mesas
p.111

High Growth Rate with Reduced Surface Roughness during On-Axis Homoepitaxial Growth of 4H-SiC
p.115

Growth of 4H- and 3C-SiC Epitaxial Layers on 4H-SiC Step-Free Mesas
p.119

4H-SiC Epitaxy with Very Smooth Surface and Low Basal Plane Dislocation on 4 Degree Off-Axis Wafer
p.123

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Epitaxial Growth of 3C-SiC on Si Substrates by Atmospheric Hot Wall CVD Using Hexamethyledisilane[(CH₃)₆Si₂]

Abstract:

We adopted HMDS(Hexamethyledisilane) as a SiC(Silicon carbide) source material for epitaxial growth of 3C-SiC on Si substrate. Various growth profiles were investigated to optimize hetero-epitaxial growth of 3C-SiC layers. We also focused on the homogeneous film deposition of 3C-SiC on Si by employing two susceptor shapes, flat and tilted susceptors, to control a thickness of the boundary layer formed on the Si substrate. Fringe color patterns were observed on 3C-SiC layer on Si and hence it was easy to characterize the film uniformity by analyzing this color. 3C-SiC epitaxial layers were systematically analyzed by an optical microscope, a Raman spectroscopy, a SEM and an XRD.