Epitaxial Growth of 3C-SiC on Si Substrates by Atmospheric Hot Wall CVD Using Hexamethyledisilane[(CH3)6Si2]
We adopted HMDS(Hexamethyledisilane) as a SiC(Silicon carbide) source material for epitaxial growth of 3C-SiC on Si substrate. Various growth profiles were investigated to optimize hetero-epitaxial growth of 3C-SiC layers. We also focused on the homogeneous film deposition of 3C-SiC on Si by employing two susceptor shapes, flat and tilted susceptors, to control a thickness of the boundary layer formed on the Si substrate. Fringe color patterns were observed on 3C-SiC layer on Si and hence it was easy to characterize the film uniformity by analyzing this color. 3C-SiC epitaxial layers were systematically analyzed by an optical microscope, a Raman spectroscopy, a SEM and an XRD.
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
T. W. Lee et al., "Epitaxial Growth of 3C-SiC on Si Substrates by Atmospheric Hot Wall CVD Using Hexamethyledisilane[(CH3)6Si2]", Materials Science Forum, Vols. 679-680, pp. 107-110, 2011