Epitaxial Growth on 4H-SiC on-Axis, 0.5°, 1.25°, 2°, 4°, 8° Off-Axis Substrates – Defects Analysis and Reduction

Kinga Kościewicz; Wlodek Strupiński; Dominika Teklinska; Krystyna Mazur; Mateusz Tokarczyk; Grzegorz Kowalski; Andrzej Roman Olszyna

doi:10.4028/www.scientific.net/MSF.679-680.95

Paper Titles

Analytical Model of Stress Relaxation in 3C SiC Layers on Silicon
p.79

Structural Investigations of a Sputtered Intermediate Carbonization Layer for 3C-SiC on (111) and (110) Si Substrates
p.83

Atomistic Simulation of SiC Growth at the SiC(0001)/Si_1-XC_x Interface by the Monte Carlo Method
p.87

Polarity Control of CVD Grown 3C-SiC on Si(111)
p.91

Epitaxial Growth on 4H-SiC on-Axis, 0.5°, 1.25°, 2°, 4°, 8° Off-Axis Substrates – Defects Analysis and Reduction
p.95

Investigation of the Growth of 3C-SiC on Si by Vapor-Liquid-Solid ( VLS ) Transport
p.99

Geometrical Control of 3C and 6H-SiC Nucleation on Low Off-Axis Substrates
p.103

Epitaxial Growth of 3C-SiC on Si Substrates by Atmospheric Hot Wall CVD Using Hexamethyledisilane[(CH₃)₆Si₂]
p.107

Investigation of 3C-SiC Lateral Growth on 4H-SiC Mesas
p.111

HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Epitaxial Growth on 4H-SiC on-Axis, 0.5°, 1.25°,...

Epitaxial Growth on 4H-SiC on-Axis, 0.5°, 1.25°, 2°, 4°, 8° Off-Axis Substrates – Defects Analysis and Reduction

Abstract:

A good selection of growth parameters (in-situ etching, C/Si ratio, growth rate) enables obtaining of ~1nm high steps of epitaxial layers, which are comparable to the size of an elementary cell (8°off-axis) and achieve the density of BPD=8•103/cm2. Due to crystallization on substrates with low misorientation (<2°off-axis) it is possible to obtain epitaxial layers substantially lacking in BPD dislocations. However, a slightly more developed surface with Ra=1-2.5nm (1.25°, 2°off-axis) characterizes these layers. By lowering the C/Si ratio, morphology of layers crystallized on substrates with low misorientation was improved. Extending growth rate improved both the crystallographic quality of the grown layers and their polytype stability. Nevertheless, growth without BPDs, also referred to as the homogeneous (4H) polytypic growth on 4H-SiC on-axis substrates, is the most efficient way of defect elimination.

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Materials Science Forum (Volumes 679-680)

Pages:

95-98

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.95

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Online since:

March 2011

Authors:

Kinga Kościewicz, Wlodek Strupiński, Dominika Teklinska, Krystyna Mazur, Mateusz Tokarczyk, Grzegorz Kowalski, Andrzej Roman Olszyna

Keywords:

Basal Plane Dislocation (BPD), Defect, Disorientation, On-Axis, Polytypism

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