Structural Investigations of a Sputtered Intermediate Carbonization Layer for 3C-SiC on (111) and (110) Si Substrates

Abstract:

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Thin SiC buffer layers have been grown by sputtering a graphite C target onto both (111) and (110) Si substrates. Converting the graphitic C into SiC is highly temperature dependent and relies on free silicon atoms that sublime from voids in the substrate at higher temperatures. Morphological and structural investigations were performed by Field Emission Scanning Electron Microscopy (FESEM) and X-ray Diffraction (XRD).

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

83-86

DOI:

10.4028/www.scientific.net/MSF.679-680.83

Citation:

J. Huguenin-Love et al., "Structural Investigations of a Sputtered Intermediate Carbonization Layer for 3C-SiC on (111) and (110) Si Substrates", Materials Science Forum, Vols. 679-680, pp. 83-86, 2011

Online since:

March 2011

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$35.00

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