Reduction of the Surface Density of Single Shockley Faults by TCS Growth Process
p.67
p.67
On the Mechanism of Twin Boundary Elimination in 3C-SiC(111) Heteroepitaxial Layers on α-SiC Substrates
p.71
p.71
Chloride Based CVD of 3C-SiC on (0001) α-SiC Substrates
p.75
p.75
Analytical Model of Stress Relaxation in 3C SiC Layers on Silicon
p.79
p.79
Structural Investigations of a Sputtered Intermediate Carbonization Layer for 3C-SiC on (111) and (110) Si Substrates
p.83
p.83
Atomistic Simulation of SiC Growth at the SiC(0001)/Si1-XCx Interface by the Monte Carlo Method
p.87
p.87
Polarity Control of CVD Grown 3C-SiC on Si(111)
p.91
p.91
Epitaxial Growth on 4H-SiC on-Axis, 0.5°, 1.25°, 2°, 4°, 8° Off-Axis Substrates – Defects Analysis and Reduction
p.95
p.95
Investigation of the Growth of 3C-SiC on Si by Vapor-Liquid-Solid ( VLS ) Transport
p.99
p.99
Structural Investigations of a Sputtered Intermediate Carbonization Layer for 3C-SiC on (111) and (110) Si Substrates
Abstract:
Thin SiC buffer layers have been grown by sputtering a graphite C target onto both (111) and (110) Si substrates. Converting the graphitic C into SiC is highly temperature dependent and relies on free silicon atoms that sublime from voids in the substrate at higher temperatures. Morphological and structural investigations were performed by Field Emission Scanning Electron Microscopy (FESEM) and X-ray Diffraction (XRD).
You might also be interested in these eBooks
Info:
Periodical:
Materials Science Forum (Volumes 679-680)
Pages:
83-86
Citation:
Online since:
March 2011
Authors:
Keywords:
Price:
Сopyright:
© 2011 Trans Tech Publications Ltd. All Rights Reserved
Share:
Citation: