Silicon Carbide and Related Materials 2010

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Authors: Tomohisa Kato, Tomonori Miura, Ichiro Nagai, Hiroyoshi Taniguchi, Hideaki Kawashima, Tetsuya Ozawa, Kazuo Arai, Hajime Okumura
Abstract: In this study, we suggest the effective enlargement method of (0001) 4H-SiC bulk crystals grown by the sublimation method using long length growth technique (LLG). This method could achieve low thermal strain and rapid enlargement growth comparing with conventional c-axis growth technique. We also demonstrated high quality enlargement growth from 2inch to  4inch of (0001) 4H-SiC by LLG.
Authors: Kazutoshi Kojima, Tomohisa Kato, Sachiko Ito, Jun Kojima, Fusao Hirose, Yasuo Kito, Shoichi Yamauchi, Koichi Nishikawa, Ayumu Adachi
Abstract: We investigated a way of reducing the stacking fault (SF) density on a highly nitrogen (N) doped 4H-SiC crystal. SFs were generated at highly N doped crystal exceeding 4 x 1019 cm-3 and the density was increased with increasing N concentration. We found that Al co-doping had the potential to suppress this SF generation and was effective up to an N concentration of about 1 x 1021cm-3. This effect depended strongly on the Al concentration. We discussed the reason for the SF suppression effect of Al co-doping.
Authors: Alexander A. Lebedev, Pavel L. Abramov, A.S. Zubrilov, Elena V. Bogdanova, Sergey P. Lebedev, Natasha V. Seredova, Alla S. Tregubova
Abstract: It is demonstrated that polytype-homogeneous, thick (>100 m) epitaxial 3C-SiC layers of good quality with diameters of no less than 25 mm can be grown on 6H-SiC substrates by sublimation epitaxy in vacuum. These layers can be used as seeds for growing bulk 3C-SiC crystals by modified Lely method.
Authors: Krzysztof Grasza, Emil Tymicki, Katarzyna Racka, Marek Orzyłowski
Abstract: A set of single crystal growth experiments was performed in the new resistively heated two-heater furnace, which plays the role of an induction furnace with a moving coil. In this new experimental setup we are able to control the shape of the crystallization front, from flat to extremely convex. The positive results of the experimental tests differ significantly from prior discouraging interpretation of computational modeling results obtained by a commonly used software, previously presented in the literature. The essence of a new regulation of the temperature field during the crystal growth is a displacement of the maximum of the temperature field, which at the beginning of the growth is located close to the seed and it moves towards the source material as the crystal length increases. In this way, the crystallization front is heated with a similar intensity regardless the increasing crystal length.
Authors: Irina G. Galben-Sandulache, Maya Marinova, Alkyoni Mantzari, Guoli L. Sun, Ariadne Andreadou, Didier Chaussende, Efstathios K. Polychroniadis
Abstract: This work presents the crystalline quality investigation of 3C-SiC unseeded crystals grown from vapor phase. Samples were polished after different crystallographic planes from crystals grown with or without nitrogen flow. The structural and optical investigation showed that the central part of the samples exhibited a very good crystalline quality. The best samples proved to be the {100} growth sectors where the only defects found were stacking faults with a defect density under 103 cm-1. At the edges, i.e. between two adjacent growth sectors, structural investigation by transmission electron microscopy revealed stacking faults and hexagonal polytype inclusions. The nitrogen doping was found not to have an influence on the crystalline quality.
Authors: Alexander, Kazuaki Seki, Shigeta Kozawa, Yuji Yamamoto, Toru Ujihara, Yoshikazu Takeda
Abstract: We investigated the polytype transition process from 4H-SiC to 6H-SiC during solution growth from the viewpoint of growth mode. The polarity dependence of the dominant grown polytype was similar to those of the sublimation growth and the CVD growth that 4H-SiC relatively grew stably on the C-face. Moreover, the polytype transition occurred during spiral growth. The 6H-SiC expanded to periphery overgrowing on the 4H-SiC. In contrast, there is no sign that 4H-SiC grew on 6H-SiC.
Authors: Shigeta Kozawa, Kazuaki Seki, Alexander, Yuji Yamamoto, Toru Ujihara, Yoshikazu Takeda
Abstract: We investigated dislocation behavior in the crystal grown on 6H-SiC (0001) by solution method using synchrotron X-ray topography and thermal chlorine etching. It was confirmed that basal plane dislocation was not newly formed in the grown layer. In addition, the positions of threading screw dislocations (TSDs) were displaced and some of them disappeared in the grown layer. This displacement was caused by the bending of the TSDs during growth.
Authors: Frédéric Mercier, Shin Ichi Nishizawa
Abstract: We investigated numerically fluid dynamics and carbon transport in a 2 inches SiC solution growth with the presence of alternative magnetic fields. Buoyancy and Marangoni convection are taken into account. Our numerical results revealed that the magnetic field parameters have a strong impact on the melt convection. We also propose a solution to increase the mass transfer at the crystal growth front.
Authors: Kazuhiko Kusunoki, Kazuhito Kamei, Nobuyoshi Yashiro, Koji Moriguchi, Nobuhiro Okada
Abstract: We attempted the traveling solvent method (TSM) growth of SiC on 6H-SiC(0001) substrates using Si and Si-M (M=Ti, Cr and Dy) solvents at growth temperatures of 1500-1800°C. It was confirmed that 4H-SiC polytype was extremely stabilized in the highly carbon dissolved liquid phase. 4H-SiC growth on 6H-SiC, i.e. hetropolytype epitaxial growth, was observed only from Si-Dy solvent. The Dy content above 60at% was necessary to obtain 100% 4H-SiC polytype.

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