Silicon Carbide and Related Materials 2010

Volumes 679-680

doi: 10.4028/

Paper Title Page

Authors: James Huguenin-Love, Rodney J. Soukup, Ned J. Ianno, Noel T. Lauer

Abstract: Thin SiC buffer layers have been grown by sputtering a graphite C target onto both (111) and (110) Si substrates. Converting the graphitic C...

Authors: Makoto Itoh, Tsuyoshi Uda, Jun Nara, Takahisa Ohno

Abstract: We developed the computer simulation method to study growth of SiC at the SiC(0001)/Si1-xCx interface based on the Monte Carlo method....

Authors: Jörg Pezoldt, Bernd Schröter

Abstract: XPD and XRD measurements revealed a difference in the crystallographic polarity of 3C-SiC(111) grown on Si(111) carbonized by ethene diluted...

Authors: Kinga Kościewicz, Wlodek Strupiński, Dominika Teklinska, Krystyna Mazur, Mateusz Tokarczyk, Grzegorz Kowalski, Andrzej Roman Olszyna

Abstract: A good selection of growth parameters (in-situ etching, C/Si ratio, growth rate) enables obtaining of ~1nm high steps of epitaxial layers,...

Authors: Stéphane Berckmans, Laurent Auvray, Gabriel Ferro, François Cauwet, Davy Carole, Veronique Soulière, Jean Claude Viala, Emmanuel Collard, Jean Baptiste Quoirin, Christian Brylinski

Abstract: In this work, the growth by Vapour-Liquid-Solid (VLS) mechanism of 3C-SiC on silicon substrate is reported. Firstly, a germanium layer is...

Authors: Valdas Jokubavicius, Rickard Liljedahl, Yi Yu Ou, Hai Yan Ou, Satoshi Kamiyama, Rositza Yakimova, Mikael Syväjärvi

Abstract: Growth of 3C or 6H-SiC epilayers on low off-axis 6H-SiC substrates can be mastered by changing the size of the on axis plane formed by long...

Authors: Tae Woo Lee, Im Gyu Yeo, Byoung Chul Shin, Won Jae Lee, Mi Seon Park, Hyun Hee Hwang, Shigehiro Nishino

Abstract: We adopted HMDS(Hexamethyledisilane) as a SiC(Silicon carbide) source material for epitaxial growth of 3C-SiC on Si substrate. Various...

Authors: Jean Lorenzzi, Nikoletta Jegenyes, Mihai Lazar, Dominique Tournier, François Cauwet, Davy Carole, Gabriel Ferro

Abstract: In this work we report on 3C-SiC heteroepitaxial growth on 4H-SiC(0001) substrates which were patterned to form mesa structures. Two...

Authors: Jawad ul Hassan, Peder Bergman, Anne Henry, Erik Janzén

Abstract: The effect of different C/Si ratio on the surface morphology has been studied to optimize the on-axis homoepitaxial growth conditions on...

Authors: Rachael L. Myers-Ward, Luke O. Nyakiti, Jennifer K. Hite, Orest J. Glembocki, Francisco J. Bezares, Joshua D. Caldwell, Eugene A. Imhoff, Karl D. Hobart, James C. Culbertson, Yoosuf N. Picard, Virginia D. Wheeler, Charles R. Eddy, D. Kurt Gaskill

Abstract: Homo- and heteroepitaxial 3C-SiC layers were grown on 4H-SiC step-free mesas. The yields of smooth, defect-free mesas were ~ 17% for both...


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