Silicon Carbide and Related Materials 2010

Volumes 679-680

doi: 10.4028/

Paper Title Page

Authors: Vladimir Ilich Sankin, Pavel P. Shkrebiy, Alla A. Lepneva, Andrey G. Ostroumov, Pavel L. Abramov

Abstract: A natural superlattice (NSL) in silicon carbide polytypes is shown to introduce a miniband structure into the conduction band, which leads...

Authors: Massimo Camarda, Ruggero Anzalone, Andrea Severino, Nicolò Piluso, Antonino La Magna, Francesco La Via

Abstract: In this article, using finite element simulations and analytical approaches, we demonstrate that planar rotators[1] can be effectively used...

Authors: Mariana A. Fraga

Abstract: This work compares the piezoresistive properties of SiC thin films produced by two techniques enhanced by plasma, PECVD (plasma enhanced...

Authors: Nicolò Piluso, Andrea Severino, Massimo Camarda, Andrea Canino, Antonino La Magna, Francesco La Via

Abstract: Micro-Raman spectroscopy has been used to study the dependence between the carrier concentration and electrical mobility in n-doped 3C-SiC...

Authors: Adam Gali

Abstract: A brief overview about the recent progress in developing the methods to calculate the properties of defects in solids is given and some...

Authors: Lars S. Løvlie, Bengt Gunnar Svensson

Abstract: Annealing of the Z1/2 and EH6/7 has been studied by DLTS after ion implantation of MeV Si ions and subsequent annealing in either N2 or O2...

Authors: Fei Yan, A. Espenlaub, Robert P. Devaty, Takeshi Ohshima, Wolfgang J. Choyke

Abstract: Low doped epitaxial films of 4H SiC irradiated at 1 MeV and electron fluences of 1×1015 cm-2, 3×1015 cm-2 and 1×1016 cm-2 have been used to...

Authors: Maya Marinova, Ariadne Andreadou, Jian Wu Sun, Jean Lorenzzi, Alkyoni Mantzari, Georgios Zoulis, Nikoletta Jegenyes, Sandrine Juillaguet, Veronique Soulière, Gabriel Ferro, Jean Camassel, Efstathios K. Polychroniadis

Abstract: The current communication focuses on the influence of a post-growth annealing on the evolution of defects inside (111) 3C-SiC layers grown...

Authors: Ivan G. Ivanov, Anne Henry, Fei Yan, Wolfgang J. Choyke, Erik Janzén

Abstract: The analysis of the donor-acceptor pair luminescence of P-Al and N-Al pairs obtained recently for the cubic 3C polytype of SiC is viewed in...

Authors: Franziska Christine Beyer, Carl G. Hemmingsson, Henrik Pedersen, Anne Henry, Junichi Isoya, Norio Morishita, Takeshi Ohshima, Erik Janzén

Abstract: DLTS measurements show bistable behavior of the previously reported EH5 peak in low- and high-energy electron irradiation 4H-SiC. Both...


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