Silicon Carbide and Related Materials 2010

Volumes 679-680

doi: 10.4028/

Paper Title Page

Authors: Dai Okamoto, Hiroshi Yano, Shinya Kotake, Tomoaki Hatayama, Takashi Fuyuki

Abstract: We report on electrical and physical investigations aimed to clarify the mechanisms behind the high channel mobility of 4H-SiC...

Authors: Takuji Hosoi, Kohei Konzono, Yusuke Uenishi, Shuhei Mitani, Yuki Nakano, Takashi Nakamura, Takayoshi Shimura, Heiji Watanabe

Abstract: Surface and interface morphology of thermal oxides grown on 4-off (0001) oriented 4H-SiC substrates by dry O2 oxidation was investigated...

Authors: Ioana Pintilie, Francesco Moscatelli, Roberta Nipoti, Antonella Poggi, Sandro Solmi, Lars S. Løvlie, Bengt Gunnar Svensson

Abstract: Comparative studies of gate oxides on a N+ pre-implanted area (Ninterface ~1x1019cm-3) and on a virgin Si face 4H-SiC material (Ninterface...

Authors: Ming Hung Weng, Simon Barker, Rajat Mahapatra, Benjamin J.D. Furnival, Nicolas G. Wright, Alton B. Horsfall

Abstract: We have investigated the annealing of fixed oxide charge and interfacial traps in MISiC strucures by means of the photo capacitance voltage...

Authors: Jody Fronheiser, Aveek Chatterjee, Ulrike Grossner, Kevin Matocha, Vinayak Tilak, Liang Chun Yu

Abstract: The gate oxide reliability and channel mobility of carbon face (000-1) 4H Silicon Carbide (SiC) MOSFETs are investigated. Several gate...

Authors: Massimo Camarda, Andrea Severino, Patrick Fiorenza, Vito Raineri, S. Scalese, Corrado Bongiorno, Antonino La Magna, Francesco La Via, Marco Mauceri, Danilo Crippa

Abstract: Using several types of surface analysis (Optical profilometers (OP), Atomic Force Microscopies (AFM), Scanning Electron Microscopies (SEM)...

Authors: Takeshi Ohshima, Naoya Iwamoto, Shinobu Onoda, Takahiro Makino, Shinji Nozaki, Kazutoshi Kojima

Abstract: Charge induced in 6H-SiC nMOS capacitors by 15 MeV oxygen ion microbeams was measured using Transient Ion Beam Induced Current (TIBIC)...

Authors: Daniel B. Habersat, Aivars J. Lelis

Abstract: We have used C-V techniques to study the bias instability of 4H-SiC MOS capacitors and FETs, and compared those results to those obtained...

Authors: T. Umeda, K. Esaki, Ryouji Kosugi, Kenji Fukuda, Norio Morishita, Takeshi Ohshima, Junichi Isoya

Abstract: We present an electrically detected electron-spin-resonance (ESR) study on SiO2-SiC interface regions of n-channel lateral 4H-SiC MOSFETs...

Authors: Tomoaki Hatayama, Hiroyuki Suzuki, Hidenori Koketsu, Hiroshi Yano, Takashi Fuyuki

Abstract: Surface properties of the 4H-SiC (0001) Si faces could be evaluated by the contact angle measurements with water droplet method, X-ray...


Showing 81 to 90 of 200 Paper Titles