Shallow Traps at P-Doped SiO2/4H-SiC(0001) Interface

Dai Okamoto; Hiroshi Yano; Shinya Kotake; Tomoaki Hatayama; Takashi Fuyuki

doi:10.4028/www.scientific.net/MSF.679-680.338

Paper Titles

Understanding the Inversion-Layer Properties of the 4H-SiC/SiO₂ Interface
p.318

The Influence of Excess Nitrogen, on the Electrical Properties of the 4H-SiC/SiO₂ Interface
p.326

Microscopic Examination of SiO₂/4H-SiC Interfaces
p.330

Reduction in the Density of Interface States at the SiO₂/4H-SiC Interface after Dry Oxidation in the Presence of Potassium
p.334

Shallow Traps at P-Doped SiO₂/4H-SiC(0001) Interface
p.338

Investigation of Surface and Interface Morphology of Thermally Grown SiO₂ Dielectrics on 4H-SiC(0001) Substrates
p.342

Non-Nitridated Oxides: Abnormal Behaviour of N-4H-SiC/SiO₂ Capacitors at Low Temperature Caused by near Interface States
p.346

Study of the Interface Properties of TiO₂/SiO₂/SiC by Photocapacitance
p.350

Evaluation of 4H-SiC Carbon Face Gate Oxide Reliability
p.354

HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Shallow Traps at P-Doped SiO2/4H-SiC(0001)...

Shallow Traps at P-Doped SiO₂/4H-SiC(0001) Interface

Abstract:

We report on electrical and physical investigations aimed to clarify the mechanisms behind the high channel mobility of 4H-SiC metal–oxide–semiconductor field-effect transistors processed with POCl3 annealing. By low-temperature capacitance–voltage analysis, we found that the shallow interface traps are effectively removed by P incorporation. Using x-ray photoelectron spectroscopy, we found that the three-fold coordinated P atoms exist at the oxide/4H-SiC interface. The overall results suggest that P atoms directly remove the Si–Si bonds and thus eliminate the near-interface traps.

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Materials Science Forum (Volumes 679-680)

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338-341

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.338

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Online since:

March 2011

Authors:

Dai Okamoto, Hiroshi Yano, Shinya Kotake, Tomoaki Hatayama, Takashi Fuyuki

Keywords:

Interface State, SiC MOS Interface, X-Ray Photoelectron Spectroscopy (XPS)

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