Shallow Traps at P-Doped SiO2/4H-SiC(0001) Interface

Abstract:

Article Preview

We report on electrical and physical investigations aimed to clarify the mechanisms behind the high channel mobility of 4H-SiC metal–oxide–semiconductor field-effect transistors processed with POCl3 annealing. By low-temperature capacitance–voltage analysis, we found that the shallow interface traps are effectively removed by P incorporation. Using x-ray photoelectron spectroscopy, we found that the three-fold coordinated P atoms exist at the oxide/4H-SiC interface. The overall results suggest that P atoms directly remove the Si–Si bonds and thus eliminate the near-interface traps.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

338-341

DOI:

10.4028/www.scientific.net/MSF.679-680.338

Citation:

D. Okamoto et al., "Shallow Traps at P-Doped SiO2/4H-SiC(0001) Interface", Materials Science Forum, Vols. 679-680, pp. 338-341, 2011

Online since:

March 2011

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.