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Paper Titles
Reduction in the Density of Interface States at the SiO2/4H-SiC Interface after Dry Oxidation in the Presence of Potassium
p.334
Shallow Traps at P-Doped SiO2/4H-SiC(0001) Interface
p.338
Investigation of Surface and Interface Morphology of Thermally Grown SiO2 Dielectrics on 4H-SiC(0001) Substrates
p.342
Non-Nitridated Oxides: Abnormal Behaviour of N-4H-SiC/SiO2 Capacitors at Low Temperature Caused by near Interface States
p.346
Study of the Interface Properties of TiO2/SiO2/SiC by Photocapacitance
p.350
Evaluation of 4H-SiC Carbon Face Gate Oxide Reliability
p.354
On the “Step Bunching” Phenomena Observed on Etched and Homoepitaxially Grown 4H Silicon Carbide
p.358
Oxygen Ion Induced Charge in SiC MOS Capacitors Irradiated with Gamma-Rays
p.362
Improved Observation of SiC/SiO2 Oxide Charge Traps Using MOS C-V
p.366

Study of the Interface Properties of TiO2/SiO2/SiC by Photocapacitance

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Abstract:

We have investigated the annealing of fixed oxide charge and interfacial traps in MISiC strucures by means of the photo capacitance voltage technique at temperatures up to 500°C. Elevated temperature measurements show reduced hysteresis and reduced fixed oxide charge at the interface. The photo capacitance technique shows a real-time measurement at elevated temperatures, in which electrons are populated by photo energy, in a 4H-SiC MIS structure. We also confirm the reduction of fixed oxide charge at the interface by means of high temperature post deposition annealing, which occurs during the high temperature measurements.

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Periodical:

Materials Science Forum (Volumes 679-680)

Pages:

350-353

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.350

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Online since:

March 2011

Authors:

Ming Hung Weng, Simon Barker, Rajat Mahapatra, Benjamin J.D. Furnival, Nicolas G. Wright, Alton B. Horsfall

Keywords:

High-K Dielectric, Interface State Density (Dit), Interface Trap, Ledge, MISiC

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© 2011 Trans Tech Publications Ltd. All Rights Reserved

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References

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DOI: 10.1016/s0038-1101(98)00122-1

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